FQA13N50C Fairchild Semiconductor, FQA13N50C Datasheet - Page 3

• Manufacturer Part Number: FQA13N50C
• Description: MOSFET N-CH 500V 13.5A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA13N50C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 6.75A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 13.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 2055pF @ 25V
• Power - Max: 218W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
3000
2500
2000
1500
1000
500
10
10
10
1.5
1.0
0.5
0
-1
10
1
0
10
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs
Top :
Bottom : 4.5 V
Figure 1. On-Region Characteristics
0
Drain Current and Gate Voltage
10.0 V
15.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
GS
5
V
V
DS
DS
10
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
I
D
0
0
, Drain Current [A]
C
C
C
15
iss
oss
rss
20
V
GS
= 10V
C
C
C
※
iss
oss
rss
1. 250µ s Pulse Test
2. T
Notes :
25
= C
= C
= C
C
= 25 ℃
10
gs
10
ds
gd
+ C
※
+ C
1
1
Note : T
gd
gd
※
(C
30
1. V
2. f = 1 MHz
Notes ;
V
ds
GS
= shorted)
GS
J
= 25 ℃
= 0 V
= 20V
35
12
10
10
10
10
10
10
10
8
6
4
2
0
-1
-1
0
1
0
1
0
0.2
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
25
Figure 2. Transfer Characteristics
o
C
150
Variation with Source Current
0.4
10
o
C
150 ℃
4
V
Q
V
and Temperature
SD
G
GS
0.6
V
, Total Gate Charge [nC]
, Source-Drain voltage [V]
, Gate-Source Voltage [V]
DS
25 ℃
= 400V
V
20
DS
-55
V
= 250V
DS
o
C
= 100V
0.8
6
30
1.0
※
1. V
2. 250µs Pulse Test
Notes :
※
※
1. V
2. 250µs Pulse Test
DS
Notes :
8
= 40V
Note : I
G S
40
= 0V
1.2
D
= 13.5A
Rev. A, October 2004
50
1.4
10