FQPF6N90 Fairchild Semiconductor, FQPF6N90 Datasheet

MOSFET N-CH 900V 3.4A TO-220F

FQPF6N90

Manufacturer Part Number
FQPF6N90
Description
MOSFET N-CH 900V 3.4A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF6N90

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.9 Ohm @ 1.7A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
3.4A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
52nC @ 10V
Input Capacitance (ciss) @ Vds
1880pF @ 25V
Power - Max
56W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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QFET N-CHANNEL
FEATURES
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
1999 Fairchild Semiconductor Corporation
Advanced New Design
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge: 40nC (Typ.)
Extended Safe Operating Area
Lower R
T
Symbol
Symbol
J
V
dv/dt
R
R
V
E
, T
E
I
I
P
T
DSS
DM
I
AR
GS
AR
D
AS
D
L
JC
JA
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and Storage
Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
: 1.5
(Typ.)
Junction-to-Ambient
Junction-to-Case
Characteristics
Characteristics
C
= 25 C)
C
C
= 25 C)
= 100 C)
Typ.
55 to +150
Value
13.6
0.45
900
710
300
3.4
2.1
3.4
5.6
4.0
56
30
Max.
2.25
62.5
TO-220F
1. Gate 2. Drain 3. Source
BV
R
I
D
DS(ON)
= 3.4A
DSS
1
2
3
= 900V
= 1.9
FQPF6N90
Units
W/ C
V/ns
Units
mJ
mJ
W
C/W
V
A
A
V
A
C
REV. B
1

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FQPF6N90 Summary of contents

Page 1

... Purposes, 1/8” from case for 5-seconds THERMAL RESISTANCE Symbol Characteristics R Junction-to-Case JC R Junction-to-Ambient JA 1999 Fairchild Semiconductor Corporation Value 900 = 100 C) 2.1 C 13.6 710 3.4 5 +150 300 Typ. FQPF6N90 BV = 900V DSS R = 1.9 DS(ON 3.4A D TO-220F Gate 2. Drain 3. Source Units V/ Max. Units 2.25 C/W 62 ...

Page 2

... FQPF6N90 ELECTRICAL CHARACTERISTICS Symbol Characteristics BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage, Forward I GSS Gate-Source Leakage, Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

Page 3

QFET N-CHANNEL Fig 1. Output Characteristics V GS Top : 15 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5 ¡Ø Note : 1. 250¥ìs Pulse ...

Page 4

... FQPF6N90 Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Fig 9. Max. Safe Operating Area 2 10 Operation in This Area is Limited by R DS(on ¡Ø Notes : 150 Single Pulse - Drain-Source Voltage [ 3.0 2.5 2.0 1.5 1.0 ¡Ø Note : 1 ...

Page 5

... Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms 10V Fig 12. Gate Charge Test Circuit & Waveform V GS Same Type as DUT 10V V DS DUT 0.5 rated DUT DSS DSS DUT DD DD FQPF6N90 Charge 90% 90% 10% 10 d(on) d(on d(off) d(off off off BV BV DSS DSS ---- ---- ---- ---- ...

Page 6

... FQPF6N90 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) 6 DUT + Driver R G Same Type as DUT • dv/dt controlled by R • I controlled by pulse period S Gate Pulse Width Gate Pulse Width Gate Pulse Width -------------------------- -------------------------- ...

Page 7

... QFET N-CHANNEL TO-220F Package Dimensions TO-220F (FS PKG CODE AQ) 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 FQPF6N90 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters September 1999, Rev B 7 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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