HUF75339G3 Fairchild Semiconductor, HUF75339G3 Datasheet - Page 2

• Manufacturer Part Number: HUF75339G3
• Description: MOSFET N-CH 55V 75A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUF75339G3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 20V
• Input Capacitance (ciss) @ Vds: 2000pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . .T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
©2001 Fairchild Semiconductor Corporation
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SWITCHING SPECIFICATIONS (V
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Reverse Transfer Capacitance
1. T
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . T
J
= 25
o
C to 150
PARAMETER
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
GS
= 20k ) (Note 1) . . . . . . . . . . . . . V
T
GS
C
= 25
T
= 10V)
C
= 25
o
C, Unless Otherwise Specified
o
SYMBOL
V
r
Q
C, Unless Otherwise Specified
BV
t
Q
DS(ON)
Q
t
d(OFF)
GS(TH)
I
R
R
d(ON)
I
t
g(TOT)
Q
Q
GSS
t
DSS
OFF
g(TH)
g(10)
ON
t
DSS
t
gs
gd
r
JC
JA
f
J
I
V
V
V
V
I
(Figure 3)
TO-247
TO-220, TO-263
V
R
R
V
V
V
, T
D
D
DS
DS
GS
GS
DD
GS
GS
GS
L
GS
= 250 A, V
= 75A, V
DGR
DSS
STG
= 0.4 , V
pkg
DM
GS
AS
= 50V, V
= 45V, V
= 20V
= V
= 30V, I
= 0V to 20V
= 0V to 10V
= 0V to 2V
= 5.1
D
D
L
DS
, I
GS
TEST CONDITIONS
D
GS
D
GS
GS
GS
= 10V (Figure 9)
= 250 A (Figure 10)
75A,
= 0V
= 0V, T
= 0V (Figure 11)
10V,
V
I
R
I
(Figure 13)
D
g(REF)
DD
L
= 0.4
C
75A,
= 30V,
= 150
= 1.0mA
o
C
HUF75339G3, HUF75339P3, HUF75339S3S Rev. B
Figures 6, 14, 15
MIN
55
-55 to 175
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Figure 4
1.35
200
300
260
55
55
75
20
0.010
TYP
110
3.7
15
60
20
25
60
23
9
-
-
-
-
-
-
-
-
-
-
0.012
MAX
0.74
250
110
130
4.5
100
30
62
70
75
1
4
-
-
-
-
-
-
-
UNITS
W/
UNITS
o
o
o
o
o
o
W
V
V
V
A
C/W
C/W
C/W
nC
nC
nC
nC
nC
nA
C
C
C
ns
ns
ns
ns
ns
ns
o
V
V
A
A
C