FDP8443 Fairchild Semiconductor, FDP8443 Datasheet - Page 6

• Manufacturer Part Number: FDP8443
• Description: MOSFET N-CH 40V 80A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP8443

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 185nC @ 10V
• Input Capacitance (ciss) @ Vds: 9310pF @ 25V
• Power - Max: 188W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0035 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 188 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP8443 Rev. A
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
Figure 13. Capacitance vs Drain to Source
10000
20000
1000
1.2
1.0
0.8
0.6
0.4
100
-80
0.1
f = 1MHz
V
GS
-40
T
Junction Temperature
V
= 0V
J
, JUNCTION TEMPERATURE
DS
, DRAIN TO SOURCE VOLTAGE
0
Voltage
1
40
80
C
rss
120
C
10
oss
(
o
C
V
I
D
)
GS
= 250 μ
160
C
(
V
=
iss
)
V
DS
A
200
50
6
Figure 14. Gate Charge vs Gate to Source Voltage
Breakdown Voltage vs Junction Temperature
1.15
1.10
1.05
1.00
0.95
0.90
10
Figure 12. Normalized Drain to Source
8
6
4
2
0
0
-80
I
D
I
D
= 35A
= 1mA
20
-40
T
J
, JUNCTION TEMPERATURE
40
Q
V
g
DD
0
, GATE CHARGE(nC)
60
= 20V
V
40
DD
80
= 15V
80
100
V
DD
120
www.fairchildsemi.com
120
= 25V
(
o
C
140
160
)
160
200