FDMB506P Fairchild Semiconductor, FDMB506P Datasheet

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FDMB506P

Manufacturer Part Number
FDMB506P
Description
MOSFET P-CH 20V 6.8A 8MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMB506P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 6.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6.8A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 4.5V
Input Capacitance (ciss) @ Vds
2960pF @ 10V
Power - Max
1.9W
Mounting Type
Surface Mount
Package / Case
8-MLP, MicroFET™
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
θJA
, T
FDMB506P
P-Channel 1.8V Logic Level PowerTrench
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
well suited for portable electronics applications.
Applications
• Load switch
• DC/DC Conversion
2005 Fairchild Semiconductor Corporation
Device Marking
STG
506
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
PIN 1
MicroFET
– Continuous
– Pulsed
FDMB506P
3x1.9
Device
Parameter
These devices are
GATE
GATE
SOURCE
SOURCE
T
A
=25
o
C unless otherwise noted
Reel Size
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
7’’
Features
• –6.8 A, –20V. R
• Low profile – 0.8 mm maximum
• Fast switching
• RoHS compliant
MOSFET
D
D
D
S
5
6
7
8
R
R
Tape width
DS(ON)
DS(ON)
DS(ON)
–55 to +150
8mm
Ratings
–6.8
–20
208
1.9
= 30 mΩ @ V
= 38 mΩ @ V
= 70 mΩ @ V
±8
70
65
December 2005
GS
GS
GS
FDMB506P Rev C2(W)
4
3
2
1
= –4.5V
= –2.5V
= –1.8V
G
3000 units
Quantity
D
D
D
Units
°C/W
°C
W
V
V
A

Related parts for FDMB506P

FDMB506P Summary of contents

Page 1

... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1a) (Note 1b) Reel Size 7’’ December 2005 = 30 mΩ –4.5V DS(ON mΩ –2.5V DS(ON mΩ –1.8V DS(ON Ratings Units –20 ±8 –6.8 70 1.9 –55 to +150 65 208 Tape width Quantity 8mm 3000 units FDMB506P Rev C2( °C °C/W ...

Page 2

... V mV/° mΩ 2216 2960 pF 351 470 pF 167 260 175 280 ns 80 128 3.5 nC 4.5 nC 1.6 A –0.6 –1 208°C/W when mounted on a minimum pad copper Scale letter size paper FDMB506P Rev C2(W) ...

Page 3

... Dimensional Outline and Pad Layout NOTES: A. DOES NOT FULLY CONFORM TO JEDEC REGISTRATION, MO-229, DATED 11/2001. B. DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994 FDMB506P Rev C2(W) ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -2.0V -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( -3. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDMB506P Rev C2( 1.4 ...

Page 5

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 160°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 160 C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDMB506P Rev C2(W) 20 1000 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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