FQN1N60CBU Fairchild Semiconductor, FQN1N60CBU Datasheet - Page 7

• Manufacturer Part Number: FQN1N60CBU
• Description: MOSFET N-CH 600V 0.3A TO-92
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQN1N60CBU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11.5 Ohm @ 150mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 6.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQN1N60C Rev. A
Mechanical Dimensions
[1.27
1.27TYP
0.46
0.20
0.10
]
3.60
4.58
+0.25
–0.15
0.20
(R2.29)
[1.27
1.27TYP
TO-92
0.20
]
7
0.38
+0.10
–0.05
Dimensions in Millimeters
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