SFP9Z24 Fairchild Semiconductor, SFP9Z24 Datasheet

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SFP9Z24

Manufacturer Part Number
SFP9Z24
Description
MOSFET P-CH 60V 9.7A TO-220
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of SFP9Z24

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 4.9A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
9.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
600pF @ 25V
Power - Max
49W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SFP9Z24
Quantity:
820
Advanced Power MOSFET
Thermal Resistance
FEATURES
n Avalanche Rugged Technology
n Rugged Gate Oxide Technology
n Lower Input Capacitance
n Improved Gate Charge
n 175
n Extended Safe Operating Area
n Lower Leakage Current : -10 A (Max.) @ V
n Low R
Absolute Maximum Ratings
T
Symbol
Symbol
J
R
dv/dt
R
R
V
V
E
E
I
I
, T
P
I
T
DM
AR
DSS
D
GS
AS
AR
CS
JC
JA
D
L
o
C Opereting Temperature
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
: 0.206
(Typ.)
Junction-to-Ambient
Junction-to-Case
Characteristic
Characteristic
Case-to-Sink
C
=25
C
C
=25
=100
o
C)
o
DS
C)
o
C)
= -60V
O
O
O
O
O
1
2
1
1
3
Typ.
0.5
--
--
- 55 to +175
Value
0.33
300
-9.7
-6.8
-9.7
-5.5
161
BV
R
I
-60
-40
4.9
1
49
2
TO-220
D
3
1.Gate 2. Drain 3. Source
30
DS(on)
= -9.7 A
DSS
SFP9Z24
3.06
62.5
Max.
--
= 0.28
= -60 V
Units
Units
o
W/
V/ns
C/W
mJ
mJ
o
W
V
A
V
A
A
C
Rev. C
o
C

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SFP9Z24 Summary of contents

Page 1

... L Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol -60V DS (Typ.) Characteristic o = =100 = Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient SFP9Z24 BV = -60 V DSS R = 0.28 DS(on -9 TO-220 1.Gate 2. Drain 3. Source Value -60 -9.7 -6.8 1 -40 30 161 2 1 -9.7 1 4.9 3 -5 +175 300 Typ. Max. ...

Page 2

... SFP9Z24 Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

Page 3

... Fig 3. On-Resistance vs. Drain Current Drain Current [A] D Fig 5. Capacitance vs. Drain-Source Voltage iss oss rss iss oss rss Drain-Source Voltage [ SFP9Z24 Fig 2. Transfer Characteristics Gate-Source Voltage [V] GS Fig 4. Source-Drain Diode Forward Voltage Source-Drain Voltage [V] SD Fig 6. Gate Charge vs. Gate-Source Voltage Total Gate Charge [nC ...

Page 4

... SFP9Z24 Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ J Fig 9. Max. Safe Operating Area DS(on Drain-Source Voltage [V] DS D=0 0.2 0.1 0. Fig 10. Max. Drain Current vs. Case Temperature Fig 11. Thermal Response single pulse - Square Wave Pulse Duration 1 P-CHANNEL POWER MOSFET Fig 8. On-Resistance vs. Temperature ...

Page 5

... Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms V DS Vary t to obtain p required peak -10V t p Fig 12. Gate Charge Test Circuit & Waveform Same Type as DUT V DS DUT Current Sampling ( Resistor 0.5 rated DUT DUT SFP9Z24 -10V Charge d(on 10% 90% V out BV 1 ---- 2 -------------------- DSS ...

Page 6

... SFP9Z24 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) DUT ) DUT ) + V DS DUT -- I S Driver Compliment of DUT G (N-Channel) • dv/dt controlled by “R • I controlled by Duty Factor “D” S Gate Pulse Width -------------------------- D = Gate Pulse Period Body Diode Reverse Current I RM ...

Page 7

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