APT10M09B2VFRG Microsemi Power Products Group, APT10M09B2VFRG Datasheet

APT10M09B2VFRG

Manufacturer Part Number

APT10M09B2VFRG

Description

MOSFET N-CH 100V 100A T-MAX

Manufacturer

Microsemi Power Products Group

Series

POWER MOS V®r

Datasheet

1.APT10M09LVFRG.pdf (4 pages)

Specifications of APT10M09B2VFRG

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

9 mOhm @ 50A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

100A

Vgs(th) (max) @ Id

4V @ 2.5mA

Gate Charge (qg) @ Vgs

350nC @ 10V

Input Capacitance (ciss) @ Vds

9875pF @ 25V

Power - Max

625W

Mounting Type

Through Hole

Package / Case

T-MAX

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Power MOS V

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V

also achieves faster switching speeds through optimized gate layout.

•

• Faster Switching

• Lower Leakage

STATIC ELECTRICAL CHARACTERISTICS

MAXIMUM RATINGS

Symbol

T-MAX™

DS(on)

GS(th)

DSS

GSS

GSM

DSS

STG

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

POWER MOS V

Parameter

Drain-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Avalanche Current

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

or TO-264 Package

is a new generation of high voltage N-Channel enhancement

(Repetitive and Non-Repetitive)

@ T

APT Website - http://www.advancedpower.com

= V

= 25°C

• Avalanche Energy Rated

•

FAST RECOVERY BODY DIODE

= 25°C

, I

= ±30V, V

= 80V, V

= 100V, V

= 2.5mA)

= 0V, I

FREDFET

= 10V, I

= 250µA)

= 0V)

= 0V, T

= 0V)

= 50A)

All Ratings: T

= 125°C)

APT10M09LVFR

100V

= 25°C unless otherwise specified.

APT10M09B2VFR_LVFR

MIN

100

B2VFR

T-MAX™

-55 to 150

100A 0.009

3000

5.00

TYP

±30

±40

100

400

625

300

100

0.009

±100

MAX

100

500

TO-264

LVFR

Ohms

Amps

Watts

UNIT

W/°C

UNIT

Volts

µA

°C

Ω Ω Ω Ω Ω

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APT10M09B2VFRG Summary of contents

Page 1

POWER MOS V Power MOS new generation of high voltage N-Channel enhancement ® mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching ...

Page 2

DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...

Page 3

RC MODEL Junction temp. (°C) 0.0302 Power 0.0729 (watts) 0.0955 Case temperature. (°C) FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 120 V DS > (ON (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 100 ...

Page 4

OPERATION HERE LIMITED (ON) 100 =+25° =+150°C SINGLE PULSE DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 100A D ...

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