APT10M09B2VFRG Microsemi Power Products Group, APT10M09B2VFRG Datasheet - Page 4

• Manufacturer Part Number: APT10M09B2VFRG
• Description: MOSFET N-CH 100V 100A T-MAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT10M09B2VFRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 350nC @ 10V
• Input Capacitance (ciss) @ Vds: 9875pF @ 25V
• Power - Max: 625W
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
400
100
50
10
16
12
5
1
8
4
0
FIGURE 10, MAXIMUM SAFE OPERATING AREA
0
1
V
I
D
T-MAX
LIMITED BY R DS (ON)
T C =+25°C
T J =+150°C
SINGLE PULSE
DS
OPERATION HERE
= 100A
These dimensions are equal to the TO-247 without the mounting hole.
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Q
100
V DS = 50V
g
, TOTAL GATE CHARGE (nC)
TM
V DS = 20V
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
(B2) Package Outline (B2VFR)
Dimensions in Millimeters and (Inches)
200
10
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
V DS = 80V
300
4.50 (.177) Max.
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
400
2-Plcs.
500
15.49 (.610)
16.26 (.640)
100
100µS
1mS
10mS
5.38 (.212)
6.20 (.244)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
TO-264 (L) Package Outline (LVFR)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
30,000
10,000
1,000
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
100
200
100
10
1
Dimensions in Millimeters and (Inches)
0.3
0
V
V
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
DS
SD
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
T J =+150°C
0.5
10
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
0.7
5.79 (.228)
6.20 (.244)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
5.45 (.215) BSC
20
2.79 (.110)
3.18 (.125)
2-Plcs.
T J =+25°C
0.9
19.51 (.768)
20.50 (.807)
30
APT10M09B2VFR_LVFR
1.1
40
1.3
C iss
C oss
C rss
3.10 (.122)
3.48 (.137)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
1.5
50