APT10M09B2VFRG Microsemi Power Products Group, APT10M09B2VFRG Datasheet - Page 2

• Manufacturer Part Number: APT10M09B2VFRG
• Description: MOSFET N-CH 100V 100A T-MAX
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT10M09B2VFRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 350nC @ 10V
• Input Capacitance (ciss) @ Vds: 9875pF @ 25V
• Power - Max: 625W
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
t
C
t
C
C
I
R
R
Q
Q
d(off)
V
dv
d(on)
Q
RRM
Q
I
SM
t
I
oss
t
t
rss
θJC
iss
SD
θJA
gd
S
rr
gs
r
f
/
g
rr
dt
0.25
0.20
0.15
0.10
0.05
0
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
10
S
S
S
-5
= -100A,
= -100A,
= -100A,
0.05
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.1
0.9
0.7
0.5
0.3
di
di
di
/
/
/
dt
dt
dt
= 100A/µs)
= 100A/µs)
= 100A/µs)
3
10
-4
dv
1
2
/
dt
(Body Diode)
(V
5
GS
= 0V, I
RECTANGULAR PULSE DURATION (SECONDS)
SINGLE PULSE
S
10
= -100A)
-3
4
5
6
I
I
D
D
Test Conditions
Starting T
dv
device itself.
The maximum current is limited by lead temperature.
= 100A @ 25°C
= 100A @ 25°C
/
V
V
R
V
V
V
dt
f = 1 MHz
V
GS
GS
DS
DD
DD
G
GS
numbers reflect the limitations of the test circuit rather than the
T
T
T
T
T
T
= 0.6Ω
j
j
j
j
j
j
= 25V
= 10V
= 50V
= 15V
= 50V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 0V
10
j
-2
= +25°C, L = 0.60mH, R
I
S
≤
-
I
D
100A
Note:
di
Peak T J = P DM x Z θJC + T C
MIN
MIN
/
MIN
dt
10
Duty Factor D = t 1 / t
≤ 200A/µs
-1
G
t 1
= 25Ω, Peak I
APT10M09B2VFR_LVFR
9875
3940
1470
TYP
TYP
350
180
t 2
TYP
0.4
1.7
60
18
36
50
15
9
9
V
R
2
≤100V
MAX
MAX
MAX
100
400
190
370
0.20
1.3
L
40
1.0
8
= 100A
T
J
≤ 150
Amps
Amps
UNIT
UNIT
Volts
V/ns
UNIT
°C/W
nC
pF
µC
ns
ns
°
C