BUZ21 Infineon Technologies, BUZ21 Datasheet - Page 8

• Manufacturer Part Number: BUZ21
• Description: MOSFET N-CH 100V 21A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BUZ21

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1300pF @ 25V
• Power - Max: 75W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Gate Charge (qg) @ Vgs: -
• Other names: BUZ21E3260; BUZ21IN

Avalanche energy E
parameter: I
R
Drain-source breakdown voltage
V
V
Data Sheet
E
(BR)DSS
(BR)DSS
GS
AS
= 25 , L = 340 µH
110
120
116
114
112
110
108
106
104
102
100
mJ
90
80
70
60
50
40
30
20
10
98
96
94
92
90
V
0
-60
20
= ( T
D
40
= 21 A, V
-20
j
)
60
20
AS
DD
80
= ( T
= 25 V
60
100
j
)
120
100
˚C
T
T
˚C
j
j
160
160
8
Typ. gate charge
V
parameter: I
V
GS
GS
= ( Q
16
12
10
V
8
6
4
2
0
0
Gate
D puls
10
)
= 36 A
20
0,2
V
30
DS max
40
50
0,8
BUZ 21
V
nC
Q
DS max
Gate
05.99
70