SPW20N60C2 Infineon Technologies, SPW20N60C2 Datasheet - Page 7

• Manufacturer Part Number: SPW20N60C2
• Description: MOSFET N-CH 600V 20A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW20N60C2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5.5V @ 1mA
• Gate Charge (qg) @ Vgs: 103nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 208W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: SPW20N60C2IN

11 Forward characteristics of body diode
I
parameter: T j , t
13 Typ. switching losses
E = f (I
par.: V
F
mWs
= f (V
10
10
10
10
1.6
1.2
0.8
0.6
0.4
0.2
A
-1
1
0
2
1
0
D
DS
0
0
SPW20N60C2
SD
*) E
commutation losses.
1
the switching power losses.
The values can be different
under other operating conditions.
), inductive load, T
This chart helps to estimate
=380V, V
)
on
5
0.4
includes SDP06S60 diode
10
0.8
p
E
= 10 µs
15
on
GS
*
1.2
T
T
T
T
=0/+13V, R
20
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
1.6
E
25
off
1)
j
=125°C
30
2
G
35
2.4
=3.6
V
A
V
I
D
SD
Final data
45
3
Page 7
12 Typ. switching time
t = f (R
par.: V
14 Typ. switching losses
E = f(R
par.: V
mWs
ns
10
10
10
10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
0
3
2
1
0
DS
DS
G
0
0
G
*) E
commutation losses.
1
the switching power losses.
The values can be different
under other operating conditions.
), inductive load, T
), inductive load, T
This chart helps to estimate
=380V, V
=380V, V
on
E
5
5
on
includes SDP06S60 diode
*
10
10
E
off
GS
GS
15
15
t
d(off)
=0/+13V, I
=0/+13V,I
t
f
20
20
t
d(on)
1)
SPW20N60C2
j
j
=125°C
=125°C
25
25
D
2002-08-12
D
30
30
=20A
=20A
t
r
R
R
G
G
40
40