SPW47N60C2 Infineon Technologies, SPW47N60C2 Datasheet - Page 6

• Manufacturer Part Number: SPW47N60C2
• Description: MOSFET N-CH 600V 47A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW47N60C2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 70 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 5.5V @ 2.7mA
• Gate Charge (qg) @ Vgs: 286nC @ 10V
• Input Capacitance (ciss) @ Vds: 8800pF @ 25V
• Power - Max: 415W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: SPW47N60C2IN

5 Typ. output characteristic
7 Drain-source on-state resistance
I
R
parameter: t
parameter : I
9 Gate threshold voltage
V
parameter: V
D
DS(on)
GS(th)
= f (V
0.38
0.32
0.28
0.24
0.16
0.12
0.08
0.04
110
A
0.2
V
90
80
70
60
50
40
30
20
10
0
0
7
5
4
3
2
1
0
-60
-60
0
SPW47N60C2
= f (T
DS
= f (T
); T
-20
-20
p
D
j
GS
j
)
= 10 µs, V
5
)
j
= 30 A, V
=150°C
= V
20
20
98%
DS
10
20V
12V
, I
typ
60
60
GS
GS
D
= 2.7 mA
15
= 10 V
100
100
V
°C
°C
8.5V
7.5V
6.5V
10V
V
T
T
9V
8V
7V
6V
max.
typ.
min.
DS
j
j
Final data
180
180
25
Page 6
6 Typ. drain-source on resistance
8 Typ. transfer characteristics
R
I
parameter: T
parameter: t
10 Typ. gate charge
V
parameter: I
D
DS(on)
GS
= f ( V
0.35
0.25
0.15
220
180
160
140
120
100
0.5
0.4
0.3
0.2
0.1
= f (Q
V
A
80
60
40
20
16
12
10
0
8
6
4
2
0
0
0
0
=f(I
SPW47N60C2
GS
40
D
2
Gate
); V
)
p
D
20
j
=150°C, V
= 10 µs
80
= 47 A pulsed
4
DS
)
120 160 200 240 280
6
40
2 x I
8
0,2
D
GS
V
60
x R
10
DS max
SPW47N60C2
DS(on)max
12
9V
2002-08-12
80
0,8 V
10V
14
6V
6.5V
7V
7.5V
8V
8.5V
DS max
A
nC
12V
V
I
V
Q
D
GS
Gate
20V
360
110
18