BSP296E6327 Infineon Technologies, BSP296E6327 Datasheet - Page 6

• Manufacturer Part Number: BSP296E6327
• Description: MOSFET N-CH 100V 1.1A SOT223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP296E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.1A
• Vgs(th) (max) @ Id: 1.8V @ 400µA
• Gate Charge (qg) @ Vgs: 17.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 364pF @ 25V
• Power - Max: 1.79W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP296; BSP296INTR; SP000011106

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f ( V
parameter: V
DS(on)
pF
10
10
10
Ω
2.8
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
2
1
0
-60
3
2
1
0
BSP296
DS
= f (T
)
-20
5
D
GS
j
)
= 1.1 A, V
=0, f=1 MHz, T
20
10
98%
typ
60
15
GS
= 10 V
100
20
j
= 25 °C
°C
V
C
C
C
T
oss
V
rss
iss
Rev. 2.1
j
DS
180
30
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j
F
GS(th)
= f (V
10
10
10
10
2.4
V
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
-1
-2
2
1
0
-60
1
0
0
BSP296
= f (T j )
SD
)
0.4
-20
GS
0.8
= V
20
DS ;
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
I
98%
typ.
2%
D
1.6
60
=400µA
2
100
2009-08-18
2.4
BSP296
°C
T
V
V
j
SD
160
3