BSO203SP Infineon Technologies, BSO203SP Datasheet - Page 4

• Manufacturer Part Number: BSO203SP
• Description: MOSFET P-CH 20V 9A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO203SP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 1.2V @ 100µA
• Gate Charge (qg) @ Vgs: 50.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2265pF @ 15V
• Power - Max: 2.35W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.021 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 9 A
• Power Dissipation: 2.35 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO203SPINTR; SP000012579

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
-10
-10
-10
-10
= f (T
Rev.1.2
W
2.6
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
-1
2
1
0
2
1
0
-10
0
BSO203SP
BSO203SP
DS
-1
A
20
)
)
40
-10
60
0
A
= 25 °C
80
100
-10
DC
120
1
t p = 120.0µs
1 ms
10 ms
°C
V
T
V
A
DS
160
-10
Page 4
2
2 Drain current
I
parameter: |V
D
4 Transient thermal impedance
Z
parameter : D = t
thJS
= f (T
K/W
10
10
10
10
-10
10
10
10
A
-8
-7
-6
-5
-4
-3
-2
-1
0
= f (t
-1
-2
-3
-4
2
1
0
0
10
A
BSO203SP
BSO203SP
)
-7
20
p
)
10
single pulse
GS
-6
40
|≥ 4.5 V
10
p
/T
-5
60
10
80
-4
10
100
-3
BSO203SP
10
2004-06-03
120
-2
D = 0.50
°C
0.20
0.10
0.05
0.02
0.01
T
t
s
p
A
160
10
0