BSO303SP Infineon Technologies, BSO303SP Datasheet - Page 6

• Manufacturer Part Number: BSO303SP
• Description: MOSFET P-CH 30V 8.9A 8-SOIC
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSO303SP

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8.9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.9A
• Vgs(th) (max) @ Id: 2V @ 100µA
• Gate Charge (qg) @ Vgs: 69nC @ 10V
• Input Capacitance (ciss) @ Vds: 1754pF @ 25V
• Power - Max: 2.35W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 31 m Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 8.9 A
• Power Dissipation: 2.35 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSO303SPINTR

9 Drain-source on-resistance
R
parameter: I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
mΩ
Rev.1.2
pF
22.5
17.5
12.5
10
10
10
30
25
20
15
10
-60
4
3
2
0
DS
= f(T j )
)
D
-20
5
GS
= -8.9 A, V
=0, f=1 MHz
10
20
98%
typ.
15
GS
60
= -10 V
20
100
C
C
C
V
iss
oss
rss
°C
- V
T
j
DS
160
30
Page 6
12 Forward character. of reverse diode
I
parameter: T j , t
10 Typ. gate threshold voltage
V
parameter: V
F
GS(th)
= f (V
-10
-10
-10
-10
2.5
1.5
0.5
A
-1
1
0
-60
2
1
0
0
BSO303SP
= f (T j )
SD
)
-0.4
-20
GS
-0.8
p
= V
= 80 µs
20
-1.2
DS
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
-1.6
max
typ
min
60
-2
BSO303SP
100
2002-01-08
-2.4
V
V
SD
160
-3