BSS83PE6327 Infineon Technologies, BSS83PE6327 Datasheet - Page 4

• Manufacturer Part Number: BSS83PE6327
• Description: MOSFET P-CH 60V 330MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS83PE6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 330mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 330mA
• Vgs(th) (max) @ Id: 2V @ 80µA
• Gate Charge (qg) @ Vgs: 3.57nC @ 10V
• Input Capacitance (ciss) @ Vds: 78pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS83PE6327INTR; BSS83PE6327XT; BSS83PE6327XTINTR; BSS83PE6327XTINTR; SP000012075

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Gate to source charge
V
Gate to drain charge
V
Gate charge total
V
Gate plateau voltage
V
Parameter
Reverse Diode
Inverse diode continuous forward current
T
Inverse diode direct current,pulsed
T
Inverse diode forward voltage
V
Reverse recovery time
V
Reverse recovery charge
V
DD
DD
DD
DD
A
A
GS
R
R
= 25 °C
= 25 °C
= -30 V, I
= -30 V, I
= -48 V, I
= -48 , I
= -48 V, I
= -48 V , I
= 0 V, I
F
D
F
F =
= -0.33
= I
D
D
= -0.33 A
D
l
S
S
= -0.33 A
= -0.33 A, V
= -0.33 A
, d i
, d i
F
F
/d t = 80 A/µs
/d t = 80 A/µs
GS
= 0 to -10 V
j
= 25 °C, unless otherwise specified
Preliminary data
Page 4
Symbol
Q
Q
Q
V
Symbol
I
I
V
t
Q
S
SM
rr
(plateau)
SD
gs
gd
g
rr
min.
min.
-
-
-
-
-
-
-
-
-
Values
Values
-2.94
-0.84
typ.
0.12
2.38
typ.
59.4
37.5
1.1
-
-
-0.33
-1.32
max.
max.
0.18
1.65
3.57
-1.1
89
56
1999-09-16
-
BSS 83 P
Unit
nC
V
Unit
A
V
ns
µC