BSS83PE6327 Infineon Technologies, BSS83PE6327 Datasheet - Page 7

• Manufacturer Part Number: BSS83PE6327
• Description: MOSFET P-CH 60V 330MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS83PE6327

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 330mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 330mA
• Vgs(th) (max) @ Id: 2V @ 80µA
• Gate Charge (qg) @ Vgs: 3.57nC @ 10V
• Input Capacitance (ciss) @ Vds: 78pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSS83PE6327INTR; BSS83PE6327XT; BSS83PE6327XTINTR; BSS83PE6327XTINTR; SP000012075

Drain-source on-resistance
R
parameter : I
Typ. capacitances
C = f(V
parameter: V
DS(on)
pF
10
10
10
10
5.5
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60
3
2
1
0
0
DS
BSS 83 P
= f ( T
)
-5
-20
D
GS
j
)
= -0.33 A, V
-10
=0 V, f =1 MHz
20
98%
typ
-15
60
-20
GS
100
= -10 V
-25
°C
V
T
Preliminary data
V
C
C
C
j
DS
iss
oss
rss
180
-35
Page 7
Gate threshold voltage
V
parameter: V
Forward characteristics of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
-10
-10
-10
-10
-3.0
-3.0
-3.0
-3.0
-2.0
-2.0
-2.0
-2.0
-1.5
-1.5
-1.5
-1.5
-1.0
-1.0
-1.0
-1.0
-0.5
-0.5
-0.5
-0.5
V
V
V
V
A
0.0
0.0
0.0
0.0
-1
-2
-60
-60
-60
-60
0.0
1
0
BSS 83 P
= f ( T j )
SD
-0.4
)
-20
-20
-20
-20
GS
-0.8
p
= V
= 80 µs
20
20
20
20
-1.2
DS
T
T
T
T
j
j
j
j
= 25 °C typ
= 150 °C typ
= 25 °C (98%)
= 150 °C (98%)
, I
98%
typ
2%
-1.6
D
60
60
60
60
= -80 µA
-2.0
100
100
100
100
1999-09-16
BSS 83 P
-2.4
°C
°C
°C
°C
V
V
T
T
T
T
SD
j
j
j
j
-3.0
160
160
160
160