SPB21N10 Infineon Technologies, SPB21N10 Datasheet - Page 5

• Manufacturer Part Number: SPB21N10
• Description: MOSFET N-CH 100V 21A D2PAK
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPB21N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 44µA
• Gate Charge (qg) @ Vgs: 38.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 865pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SPB21N10INTR

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f ( V
A
A
50
30
20
10
30
20
15
10
0
5
0
0
2
DS
GS
); T
); V
e
p
p
3
= 80 µs
= 80 µs
j
DS
=25°C
5


4
2 x I
D
10
5
x R
DS(on)max
6
V
d
c
b
a
V GS [V]=
a= 5.6
b= 6.0
c= 7.0
d= 8.0
e= 10.0
V
V
V
DS
GS
20
8
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m
= f( I
260
220
200
180
160
140
120
100


S
80
60
40
20
14
12
11
10
0
9
8
7
6
5
4
3
2
1
0
0
0
D
= f ( I
); T
5
j
V GS [V]=
a= 5.6
b= 6.0
=25°C
4
D
fs
GS
10
)
a
15
8
b
20
c= 7.0
d= 8.0
e= 10.0
12
25
30
c
16
35
2005-02-14
SPB21N10
40
A
I
I
A
D
D
e
d
24
50