IPD09N03LB G Infineon Technologies, IPD09N03LB G Datasheet
IPD09N03LB G
Specifications of IPD09N03LB G
SP000016412
Related parts for IPD09N03LB G
IPD09N03LB G Summary of contents
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... Symbol Conditions =25 ° =100 ° =25 °C D,pulse C =25 Ω = = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB (SMD version) 9.1 mΩ IPU09N03LB G PG-TO251-3-21 09N03LB Value Unit 200 kV/µs ± -55 ... 175 °C 55/175/56 2008-04-14 ...
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... SMD version SMD version |>2 DS(on)max = =2.6 K/W the chip is able to carry 59 A. thJC <- (one layer, 70 µm thick) copper area for drain page 2 IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB G Values Unit min. typ. max 2.6 K 1.2 1 0.1 1 µ 100 - 10 100 nA - 11.6 14.4 mΩ ...
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... Symbol Conditions C iss = oss f =1 MHz C rss t d( =2.7 Ω d(off g( plateau V =0 g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB G Values Unit min. typ. max. - 1200 1600 pF - 440 590 - 3 2.0 2 350 - 0.96 1 2008-04-14 ...
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... Rev. 1.55 2 Drain current I =f 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 100 µ 0.001 10 100 10 [V] DS page 4 IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 single pulse 0. [s] p ...
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... Typ. transfer characteristics I =f |>2 DS(on)max parameter 100 175 ° Rev. 1.55 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f ° [V] GS page 5 IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB =25 ° 3.5 V 3.8 V 4 [A] D =25 ° [ 100 60 2008-04-14 ...
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... Forward characteristics of reverse diode I =f parameter: T 1000 Ciss 100 10 Crss 0.0 [V] DS page 6 IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB 200 µA 20 µA - 100 140 T [° °C 25 °C, 98% 175 °C, 98% 175 °C 0.5 1.0 1.5 V [V] SD 180 2.0 2008-04-14 ...
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... Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.55 14 Typ. gate charge V =f(Q GS parameter °C 8 100 °C 150 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB =25 A pulsed gate [nC] gate ate 2008-04-14 ...
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... Package Outline Rev. 1.55 IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB G PG-TO252-3-11 page 8 2008-04-14 ...
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... Package Outline PG-TO252-3-11: Outline Footprint: Rev. 1.55 IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB G PG-TO252-3-23 Packaging: page 9 2008-04-14 ...
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... Package Outline Rev. 1.55 IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB G PG-TO251-3-11 page 10 2008-04-14 ...
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... Package Outline Rev. 1.55 IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB G PG-TO251-3-21 page 11 2008-04-14 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.55 IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB G page 12 2008-04-14 ...