IPP80N06S3L-05 Infineon Technologies, IPP80N06S3L-05 Datasheet
IPP80N06S3L-05
Specifications of IPP80N06S3L-05
IPP80N06S3L-05IN
IPP80N06S3L05X
IPP80N06S3L05XK
SP000102206
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IPP80N06S3L-05 Summary of contents
Page 1
... IEC climatic category; DIN IEC 68-1 Rev. 1.1 Product Summary PG-TO263-3-2 Marking 3N06L05 3N06L05 3N06L05 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse = =25 °C tot stg page 1 IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 DS (SMD version) DS(on),max D PG-TO262-3-1 PG-TO220-3-1 Value = 320 825 80 ±16 165 -55 ... +175 55/175/ 4 Unit °C 2007-11-07 ...
Page 2
... (BR)DSS =115 µA GS(th = DSS T =25 ° = =125 ° = GSS =46 A DS(on = SMD version SMD version page 2 IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 Values min. typ. max 0 1.2 1 100 = 100 - 6.2 - 5.9 7.7 - 3.8 4.8 - 3.5 4.5 Unit K µ 2007-11-07 ...
Page 3
... S T =25 ° S,pulse = =25 ° =27 /dt =100 A/µ 0.9 K/W the chip is able to carry 138 A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 Values min. typ. max. - 13060 = 1640 - 1560 - 182 - 4 0.6 0.9 ...
Page 4
... V DS Rev. 1.1 2 Drain current I =f 100 150 200 4 Max. transient thermal impedance Z =f(t thJC parameter µs 10 µs 100 µ 100 [V] page 4 IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2007-11-07 ...
Page 5
... GS DS parameter 200 150 100 Rev. 1.1 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter 4 3 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 7 -55 ° °C 5 175 ° -60 [V] page 5 IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L- ° 3 4 100 100 T [° 150 140 180 2007-11-07 ...
Page 6
... Rev. 1.1 10 Typ. capacitances 1150µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 10 25 °C 1 0.8 1 1.2 1.4 0.1 [V] page 6 IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L- MHz DS GS Ciss Coss Crss [ j(start) 100°C 150° 100 t [µ 25°C 1000 2007-11-07 ...
Page 7
... A 400 200 100 T [° Typ. gate charge pulsed GS gate D parameter 100 Q gate Rev. 1.1 14 Drain-source breakdown voltage V BR(DSS 150 200 16 Gate charge waveforms 150 200 250 [nC] page 7 IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L- -60 - 100 T [° 140 180 Q Q gate gate 2007-11-07 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 IPI80N06S3L-05, IPP80N06S3L-05 page 8 IPB80N06S3L-05 2007-11-07 ...
Page 9
... Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.1 Data Sheet 1.1 Data Sheet 1.1 Data Sheet 1.1 Data Sheet 1.1 Rev. 1.1 IPI80N06S3L-05, IPP80N06S3L-05 Date 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 07.11.2007 07.11.2007 07 ...