SPB80N04S2-04 Infineon Technologies, SPB80N04S2-04 Datasheet - Page 5

• Manufacturer Part Number: SPB80N04S2-04
• Description: MOSFET N-CH 40V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of SPB80N04S2-04

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.4 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 6980pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000016353; SPB80N04S204T

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
190
160
140
120
100
320
240
200
160
120
A
A
80
60
40
20
80
40
0
0
0
0
SPP80N04S2-04
DS
GS
P
0.5
tot
g
1
); T
); V
= 300W
p
p
f
= 80 µs
1
= 80 µs
2
j
DS
=25°C
1.5
3
2 x I
2
4
2.5
D
x R
5
3
DS(on)max
6
3.5
e
a
c
7
d
b
V GS [V]
4
a
b
c
d
e
f
g
V
V
V
V
DS
10.0
GS
4.5
5.0
5.3
5.5
5.7
6.0
9
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
m
= f(I
160
120
100
S
13
11
10
80
60
40
20
9
8
7
6
5
4
3
2
1
0
0
0
0
D
SPP80N04S2-04
SPP80N04S2-04,SPB80N04S2-04
V
= f (I
GS
); T
5.0
b
b
20
20
[V] =
5.3
c
j
=25°C
D
fs
GS
40
)
5.5
d
40
60
5.7
e
60
6.0
80 100 120 140 160
f
10.0
80
g
c
SPI80N04S2-04
100
d
2004-05-24
120
A
e
I
D
I
A
D
f
g
160
200