SPB80N06S-08 Infineon Technologies, SPB80N06S-08 Datasheet - Page 4

• Manufacturer Part Number: SPB80N06S-08
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPB80N06S-08

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 240µA
• Gate Charge (qg) @ Vgs: 187nC @ 10V
• Input Capacitance (ciss) @ Vds: 3660pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8 m Ohms
• Forward Transconductance Gfs (max / Min): 73 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000054056; SPB80N06S08T

Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
1000
350
300
250
200
150
100
=f(T
100
50
10
0
1
0.1
DS
0
C
); T
)
C
p
=25 °C; D =0
limited by on-state
resistance
50
1
T
V
C
DS
100
[°C]
[V]
DC
10 ms
10
1 ms
150
100 µs
10 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
100
80
60
40
20
=f(t
10
10
10
0
10
10
C
-1
-2
-3
0
1
0
); V
10
p
)
0.01
0.02
-5
single pulse
GS
0.2
0.05
0.5
0.1
=10 V
p
10
/T
SPI80N06S-08, SPP80N06S-08
50
-4
10
T
-3
C
t
100
p
[°C]
[s]
10
-2
SPB80N06S-08
150
10
-1
2005-06-28
10
200
0