SPB80N06S2-09 Infineon Technologies, SPB80N06S2-09 Datasheet

MOSFET N-CH 55V 80A D2PAK

SPB80N06S2-09

Manufacturer Part Number
SPB80N06S2-09
Description
MOSFET N-CH 55V 80A D2PAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of SPB80N06S2-09

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
9.1 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 125µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
3140pF @ 25V
Power - Max
190W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SP000013581
SPB80N06S209T

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPB80N06S2-09
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
OptiMOS
Feature
• N-Channel
• Enhancement mode
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
Type
SPP80N06S2-09
SPB80N06S2-09
Maximum Ratings, at T
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
C
C
C
=80A, V
=80 A , V
=25°C
=25°C
=25°C
DS
DD
=44V, di/dt=200A/µs, T
® Power-Transistor
=25V, R
GS
Package
P- TO220 -3-1
P- TO263 -3-2
=25Ω
1)
j
= 25 °C, unless otherwise specified
jmax
=175°C
Ordering Code
Q67060-S6025
Q67060-S6027
jmax
Page 1
2)
Symbol
I
I
E
E
dv/dt
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
P- TO263 -3-2
stg
Marking
2N0609
2N0609
-55... +175
55/175/56
Product Summary
V
R
I
D
Value
DS
DS(on)
±20
320
370
190
80
70
19
SPB80N06S2-09
6
SPP80N06S2-09
P- TO220 -3-1
2003-05-09
9.1
55
80
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A

Related parts for SPB80N06S2-09

SPB80N06S2-09 Summary of contents

Page 1

... IEC climatic category; DIN IEC 68-1 P- TO263 -3-2 Ordering Code Q67060-S6025 Q67060-S6027 Symbol puls jmax dv/dt =175°C jmax tot stg Page 1 SPP80N06S2-09 SPB80N06S2-09 Product Summary 9.1 DS(on TO220 -3-1 Marking 2N0609 2N0609 Value 80 70 320 370 19 6 ±20 190 -55... +175 55/175/56 2003-05-09 V mΩ ...

Page 2

... PCB is vertical without blown air. Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) = 0.8K/W the chip is able to carry I thJC Page 2 SPP80N06S2-09 SPB80N06S2-09 Values Unit min. typ. max. - 0.52 0.8 K Values Unit min. typ. max ...

Page 3

... V =30V, V =10V, d(on =80A =4.7Ω d(off =44V, I =80A =44V, I =80A 10V GS V (plateau) V =44V, I =80A =25° =0V, I =80A =30V /dt=100A/µ Page 3 SPP80N06S2-09 SPB80N06S2-09 Values Unit min. typ. max 2360 3140 pF - 610 810 - 150 230 - 5 320 - 0.9 1 2003-05-09 ...

Page 4

... D DS parameter : °C C SPP80N06S2- Drain current parameter: V SPP80N06S2- °C 190 Max. transient thermal impedance thJC parameter : K 7.3µ µ 100 µ Page 4 SPP80N06S2-09 SPB80N06S2-09 ) ≥ 100 120 140 160 ) SPP80N06S2- 0.50 single pulse - 2003-05-09 °C 190 T C 0.20 0.10 0.05 0.02 0. ...

Page 5

... Typ. drain-source on resistance R DS(on) parameter: V Ω [ 4 5 5 6 6 Typ. forward transconductance g = f(I DS(on)max fs parameter Page 5 SPP80N06S2-09 SPB80N06S2- SPP80N06S2- [ 5.3 5.5 5.8 6.0 6.3 6.5 6.8 7 100 120 ); T =25° 2003-05-09 ...

Page 6

... Typ. gate threshold voltage V GS(th parameter 2.5 1.5 0.5 140 °C 100 200 Forward character. of reverse diode parameter iss 10 C oss 10 C rss Page 6 SPP80N06S2-09 SPB80N06S2- 625 µA 3 125 µ -60 - 100 ) µs p SPP80N06S2- °C typ 175 °C typ °C (98 175 °C (98%) ...

Page 7

... Drain-source breakdown voltage (BR)DSS j parameter SPP80N06S2- -60 - Typ. gate charge Ω parameter °C 125 145 185 T j °C 100 140 200 T j Page 7 SPP80N06S2-09 SPB80N06S2-09 ) Gate = 80 A pulsed D SPP80N06S2-09 0 max 0 2003-05-09 DS max 80 100 nC Q Gate ...

Page 8

... If they fail reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N06S2-09 and BSPB80N06S2-09, for simplicity the device is referred to by the term SPP80N06S2-09 and SPB80N06S2-09 throughout this documentation. Page 8 ...

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