SPI70N10L Infineon Technologies, SPI70N10L Datasheet - Page 4

• Manufacturer Part Number: SPI70N10L
• Description: MOSFET N-CH 100V 70A I2PAK
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPI70N10L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 2V @ 2mA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 4540pF @ 25V
• Power - Max: 250W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000014005

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
= f (T
10
10
10
10
W
280
240
220
200
180
160
140
120
100
A
80
60
40
20
0
3
2
1
0
10
0
SPP70N10L
SPP70N10L
DS
-1
C
20
)
)
40
10
0
60
C
80
= 25 °C
10
100 120 140 160
1
DC
t p = 18.0µs
10
100 µs
1 ms
10 ms
2
T
V
°C
V
C
DS
190
10
Page 4
3
2 Drain current
I
parameter: V
4 Max. transient thermal impedance
Z
parameter : D = t
D
thJC
= f (T
K/W
10
10
10
10
10
10
10
A
75
60
55
50
45
40
35
30
25
20
15
10
= f (t
-1
-2
-3
-4
-5
5
0
1
0
10
0
C
SPP70N10L
SPP70N10L
-7
)
p
20
)
10
single pulse
GS
-6
40
10
p
10 V
60
/T
SPP70N10L,SPB70N10L
-5
80
10
-4
100 120 140 160
10
-3
10
2005-01-12
SPI70N10L
-2
D = 0.50
0.20
0.10
0.05
0.02
0.01
T
t
s
p
°C
C
190
10
0