SPP80N06S2L-05 Infineon Technologies, SPP80N06S2L-05 Datasheet
SPP80N06S2L-05
Specifications of SPP80N06S2L-05
SPP80N06S2L05
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SPP80N06S2L-05 Summary of contents
Page 1
... Repetitive avalanche energy, limited by T Reverse diode dv/dt I =80A, V =44V, di/dt=200A/µ Gate source voltage Power dissipation T =25°C C Operating and storage temperature IEC climatic category; DIN IEC 68-1 SPP80N06S2L-05,SPB80N06S2L-05 Product Summary DS(on TO262 -3-1 P- TO263 -3-2 Ordering Code Q67040-S4246 Q67040-S4256 Q67060-S7422 ...
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... ANPS071E available at www.infineon.com/optimos 2 Defined by design. Not subject to production test. 3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4 Diagrams are related to straight lead versions SPP80N06S2L-05,SPB80N06S2L-05 Symbol R thJC R ...
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... Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge SPP80N06S2L-05,SPB80N06S2L-05 Symbol Conditions ≥2 DS(on)max I ...
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... Safe operating area parameter : °C C SPP80N06S2L- SPP80N06S2L-05,SPB80N06S2L-05 2 Drain current parameter: V SPP80N06S2L- °C 190 Max. transient thermal impedance thJC parameter : K 26.0µ 100 µ Page 4 SPI80N06S2L-05 ) ≥ 100 120 140 160 ) SPP80N06S2L- 0.50 single pulse - 2003-05-09 °C 190 T C 0.20 0.10 0.05 0.02 0. ...
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... Typ. drain-source on resistance R DS(on) parameter Ω [V] a 2 3 4.0 g 4 Typ. forward transconductance g = f(I DS(on)max fs parameter: g 200 S 160 140 120 100 2 Page 5 SPI80N06S2L- SPP80N06S2L- [ 3.5 3.8 4.0 4.5 10 100 ); T =25° 100 120 140 160 2003-05- 140 200 I D ...
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... V 1.5 0.5 140 °C 100 200 Forward character. of reverse diode parameter iss C oss 10 C rss Page 6 SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L- 1.25 mA 250 µ -60 - 100 ) µs p SPP80N06S2L- °C typ 175 °C typ °C (98 175 °C (98 0.4 0.8 1.2 1.6 2 2003-05-09 °C 140 200 2 ...
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... Drain-source breakdown voltage (BR)DSS j parameter SPP80N06S2L- -60 - Typ. gate charge Ω parameter °C 125 145 185 T j °C 100 140 200 T j Page 7 SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 ) Gate = 80 A pulsed D SPP80N06S2L-05 0 max 0 120 160 2003-05-09 DS max 200 260 nC Q Gate ...
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... If they fail reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N06S2L-05 and BSPB80N06S2L-05, for simplicity the device is referred to by the term SPP80N06S2L-05 and SPB80N06S2L-05 throughout this documentation. SPP80N06S2L-05,SPB80N06S2L-05 ...