SPP80N06S2L-07 Infineon Technologies, SPP80N06S2L-07 Datasheet - Page 7
![MOSFET N-CH 55V 80A TO-220](/photos/22/17/221786/4467716_sml.jpg)
SPP80N06S2L-07
Manufacturer Part Number
SPP80N06S2L-07
Description
MOSFET N-CH 55V 80A TO-220
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.SPB80N06S2L-07.pdf
(8 pages)
Specifications of SPP80N06S2L-07
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 150µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
4210pF @ 25V
Power - Max
210W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
80A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
7mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.6V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
SP000012823
SPP80N06S2L07
SPP80N06S2L07
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SPP80N06S2L-07(2N06L07)
Manufacturer:
Vishay
Quantity:
15 000
15 Drain-source breakdown voltage
V
parameter: I
13 Typ. avalanche energy
E
par.: I
(BR)DSS
AS
mJ
450
350
300
250
200
150
100
= f (T
V
66
62
60
58
56
54
52
50
50
D
-60
0
25
= 80 A , V
SPP80N06S2L-07
= f (T
j
)
-20
D
50
=10 mA
j
)
20
DD
75
= 25 V, R
60
100
100
125
GS
140
= 25 Ω
°C
°C
T
T
j
j
200
175
Page 7
14 Typ. gate charge
V
parameter: I
GS
= f (Q
V
16
12
10
8
6
4
2
0
0
SPP80N06S2L-07
Gate
20
D
= 80 A pulsed
)
40
0,2
60
V
DS max
SPB80N06S2L-07
SPP80N06S2L-07
80
0,8 V
100
2003-05-09
DS max
120
nC
Q
Gate
150