IPB04N03LA G Infineon Technologies, IPB04N03LA G Datasheet - Page 2

• Manufacturer Part Number: IPB04N03LA G
• Description: MOSFET N-CH 25V 80A TO-263
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB04N03LA G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 55A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 60µA
• Gate Charge (qg) @ Vgs: 32nC @ 5V
• Input Capacitance (ciss) @ Vds: 3877pF @ 15V
• Power - Max: 107W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB04N03LA G; IPB04N03LAGINTR; IPB04N03LAGXT; SP000103302

Rev. 1.7
2)
R
3)
4)
V
5)
epoxy PCB FR4 with 6 cm
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
GS
Current is limited by bondwire; with an
thJC
See figure 3
T
Device on 40 mm x 40 mm x 1.5 mm
j,max
<-5 V
=1.4 K/W the chip is able to carry 125
=150 °C and duty cycle D <0.25 for
2
(one layer, 70
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
minimal footprint
6 cm
V
V
V
T
V
T
V
V
SMD version
V
SMD version
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
=55 A
DS
=V
=25 V, V
=25 V, V
=0 V, I
=20 V, V
=4.5 V, I
=10 V, I
|>2|I
2
cooling area
GS
, I
D
|R
D
D
=1 mA
D
=60 µA
D
GS
GS
DS
DS(on)max
=55 A,
=55 A,
=0 V,
=0 V,
=0 V
5)
,
min.
1.2
25
43
-
-
-
-
-
-
-
-
-
Values
typ.
1.6
0.1
5.1
3.2
1.1
10
10
85
-
-
-
-
IPB04N03LA G
max.
100
100
1.4
6.4
3.9
62
40
2
1
-
-
-
Unit
K/W
V
µA
nA
mΩ
Ω
S
2006-05-10