SPD08P06P G Infineon Technologies, SPD08P06P G Datasheet
SPD08P06P G
Specifications of SPD08P06P G
SPD08P06P G
SPD08P06PGINTR
SPD08P06PGXT
Related parts for SPD08P06P G
SPD08P06P G Summary of contents
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SIPMOS ® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead plating; RoHS compliant Type Package SPU08P06P P-TO251-3 SPD08P06P PG-TO252-3 Parameter Continuous drain current Pulsed drain current Avalanche ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient,leaded SMD version, device on PCB: Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
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Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter limited by on-state ...
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Typ. output characteristics I =f =25 ° parameter - - Typ. transfer characteristics I =f ...
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Drain-source on-state resistance R =f =-6 DS(on 700 600 500 400 300 200 typ. 100 0 -60 - Typ. capacitances C =f MHz ...
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Avalanche characteristics =25 Ω parameter: T j(start Drain-source breakdown voltage V =f =-250 µA BR(DSS ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...