BDP947E6327XT Infineon Technologies, BDP947E6327XT Datasheet
BDP947E6327XT
Specifications of BDP947E6327XT
Related parts for BDP947E6327XT
BDP947E6327XT Summary of contents
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Silicon NPN Transistors • For AF driver and output stages • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BDP948, BDP950, BDP954 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 ...
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Maximum Ratings Parameter Collector-emitter voltage BDP947 BDP949 BDP953 Collector-base voltage BDP947 BDP949 BDP953 Emitter-base voltage Collector current ≤ Peak collector current Base current ≤ Peak base current Total power dissipation- ≤ 100 ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA BDP947 mA BDP949 mA ...
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I DC current gain 100°C - 25°C -55° Base-emitter saturation voltage ...
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Collector cutoff current I CBO max Total power dissipation P 5.5 W 4.5 4 3.5 ...
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Permissible Pulse Load = ƒ totmax totDC 0.005 0.01 0.02 0.05 0.1 0.2 ...
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Package Outline Foot Print Marking Layout (Example) Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel Pin 1 Package SOT223 6.5 ±0 ±0 2.3 0.7 ±0.1 4.6 0. ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...