BA 885 E6327 Infineon Technologies, BA 885 E6327 Datasheet - Page 3

• Manufacturer Part Number: BA 885 E6327
• Description: DIODE RF SW 50V 50MA SOT-23
• Manufacturer: Infineon Technologies

Specifications of BA 885 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Diode Type: PIN - Single
• Voltage - Peak Reverse (max): 50V
• Current - Max: 50mA
• Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
• Resistance @ If, F: 7 Ohm @ 10mA, 100MHz
• Configuration: Single
• Reverse Voltage: 50 V
• Forward Continuous Current: 50 mA
• Frequency Range: MF, HF, VHF, UHF
• Carrier Life: 1.6 us
• Forward Voltage Drop: 1.1 V
• Maximum Diode Capacitance: 0.6 pF at 10 V
• Maximum Operating Temperature: + 125 C
• Maximum Series Resistance @ Maximum If: 7 Ohms at 10 mA
• Maximum Series Resistance @ Minimum If: 40 Ohms at 1.5 mA
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power Dissipation (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BA885E6327XT; SP000010151

Diode capacitance C
f = Parameter
Forward current I
T
A
= Parameter
0.35
0.25
0.15
0.05
mA
pF
10
10
10
10
10
10
0.5
0.4
0.3
0.2
0.1
10
0
-1
-2
-3
-4
-5
-6
0
0
0
0.2
5
0.4
10
F
1 MHz
100 MHz
1 GHz
=
T
0.6
15
= (V
(V
F
)
0.8
20
R
)
-40°C
+25°C
+85°C
+125°C
1
V
V
°C
T
R
S
30
1.3
3
r
Forward current I
BA595
Forward resistance r
f = Parameter
f
10
10
10
10
mA
60
50
45
40
35
30
25
20
15
10
3
2
1
0
10
5
0
BA 885
0
-1
15
30
BA595/BA885/BA895...
45
10
F
0
60
=
f
=
75
(T
S
90 105 120 °C
(I
)
F
10
)
1
2007-04-19
mA
EHD07016
F
T
S
150
10
2