BA 895 H6327 Infineon Technologies, BA 895 H6327 Datasheet - Page 2
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BA 895 H6327
Manufacturer Part Number
BA 895 H6327
Description
DIODE RF SW 50V 50MA SCD80
Manufacturer
Infineon Technologies
Datasheet
1.BA_885_E6327.pdf
(10 pages)
Specifications of BA 895 H6327
Diode Type
PIN - Single
Voltage - Peak Reverse (max)
50V
Current - Max
50mA
Capacitance @ Vr, F
0.6pF @ 10V, 1MHz
Resistance @ If, F
7 Ohm @ 10mA, 100MHz
Package / Case
SCD 80
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power Dissipation (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BA895H6327XT
Electrical Characteristics at T
Parameter
DC Characteristics
Reverse current
V
Forward voltage
I
AC Characteristics
Diode capacitance
V
V
Reverse parallel resistance
V
V
Forward resistance
I
I
Charge carrier life time
I
R
I-region width
F
F
F
F
R
R
R
R
R
L
= 50 mA
= 1.5 mA, f = 100 MHz
= 10 mA, f = 100 MHz
= 10 mA, I
= 30 V
= 100
= 0 V, f = 100 MHz
= 10 V, f = 1 MHz
= 1 V, f = 100 MHz
= 0 V, f = 1 GHz
R
= 6 mA, measured at I
A
= 25°C, unless otherwise specified
R
= 3 mA ,
2
Symbol
I
V
C
R
r
W
R
f
F
T
P
rr
I
min.
BA595/BA885/BA895...
-
-
-
-
-
-
-
-
-
-
Values
1600
0.26
0.22
typ.
130
4.5
50
10
22
-
-
max.
1.1
2007-04-19
0.4
0.6
20
40
-
-
7
-
-
V
pF
ns
Unit
nA
k
µm