BAR 66 E6327 Infineon Technologies, BAR 66 E6327 Datasheet - Page 2

• Manufacturer Part Number: BAR 66 E6327
• Description: DIODE ARRAY OVP 150V 200MA SOT23
• Manufacturer: Infineon Technologies

Specifications of BAR 66 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Diode Type: PIN - 1 Pair Series Connection
• Voltage - Peak Reverse (max): 150V
• Current - Max: 200mA
• Capacitance @ Vr, F: 0.6pF @ 35V, 1MHz
• Resistance @ If, F: 1.8 Ohm @ 5mA, 100MHz
• Power Dissipation (max): 250mW
• Configuration: Dual Series
• Reverse Voltage: 150 V
• Forward Continuous Current: 200 mA
• Carrier Life: 0.7 us
• Forward Voltage Drop: 1.2 V @ 50 mA
• Maximum Diode Capacitance: 0.6 pF @ 35 V
• Maximum Operating Temperature: + 125 C
• Maximum Series Resistance @ Maximum If: 1.8 Ohm @ 5 mA
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Power Dissipation: 250 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BAR 66 E6327; BAR66E6327INTR; BAR66E6327XT; SP000010187

1
2
Electrical Characteristics at T
Parameter
DC Characteristics
Breakdown voltage
I
Reverse current
V
Forward voltage
I
Clamping voltage
V
I
AC Characteristics
Diode capacitance
V
V
Zero bias conductance
V
Forward resistance
I
(BR)
F
PP
Charge carrier life time
I
R
V ESD according to IEC61000-4-2, only valid if pin 1 and pin 2 are connected
I pp according to IEC61000-4-5, only valid if pin 1 and pin 2 are connected
F
F
R
ESD
R
R
R
L
= 50 mA
= 5 mA, f = 100 MHz
= 10 mA, I
= 100 V
= 12 A, t
= 35 V, f = 1 MHz
= 0 V, f = 100 MHz
= 0 V, f = 1 GHz
= 100
= 5 µA
=
15 kV (contact)
p
R
= 8/20 µs
= 6 mA, measured at I
2)
1)
A
= 25°C, unless otherwise specified
R
= 3 mA,
2
Symbol
V
I
V
V
C
g
r
R
f
P
(BR)
F
CL
T
rr
min.
150
-
-
-
-
-
-
-
-
-
Values
0.95
0.35
typ.
220
tbd
0.4
1.5
0.7
7
-
-
max.
2007-04-19
1.2
0.6
0.9
1.8
20
BAR66...
-
-
-
-
-
Unit
V
nA
V
pF
µs
S