BLF878,112 NXP Semiconductors, BLF878,112 Datasheet - Page 12

• Manufacturer Part Number: BLF878,112
• Description: TRANSISTOR RF LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF878,112

• Package / Case: SOT979A
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 18dB
• Voltage - Rated: 89V
• Current Rating: 1.4µA
• Current - Test: 1.4A
• Voltage - Test: 40V
• Power - Output: 300W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Drain-source Breakdown Voltage: 89 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 89V
• Output Power (max): 300W(Typ)
• Power Gain (typ)@vds: 21@42VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 15.5S
• Drain Source Resistance (max): 110(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 190@40VpF
• Output Capacitance (typ)@vds: 60@40VpF
• Reverse Capacitance (typ): 2@40VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/DVB-T/PAL BG
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-4738; 934061788112; BLF878; BLF878,112; BLF878

NXP Semiconductors
8. Test information
Table 9.
For test circuit, see
[1]
[2]
[3]
[4]
BLF878_2
Product data sheet
Component
B1, B2
C1, C2
C3, C9
C4
C5, C7, C8
C6
C10
C11, C12
C13, C14
C15, C16
C17, C18
C20
C21
C22
C23
C24
C25, C26, C27
C28, C29
C30, C31
L1
L2
L3
L4
L5, L23
L6
L7
L20
L21
L22
R1, R2
R3, R4
R5, R6
R7, R8
American technical ceramics type 180R or capacitor of same quality.
American technical ceramics type 100B or capacitor of same quality.
American technical ceramics type 100A or capacitor of same quality.
Printed-Circuit Board (PCB): Rogers 5880;
thickness copper plating = 35 m.
List of components
Figure
Description
semi rigid coax
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
trimmer
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
stripline
resistor
potentiometer
resistor
resistor
14,
Figure 15
and
r
= 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
Figure
Rev. 02 — 15 June 2009
16.
Value
25 ; 43.5 mm
8.2 pF
3.9 pF
2.7 pF
6.8 pF
2.2 pF
47 pF
100 pF
100 pF
10 F
470 F; 63 V
15 pF
0.6 pF to 4.5 pF
11 pF
3.9 pF
4.7 pF
100 pF
560 pF
10 F
-
-
-
-
-
-
-
-
-
-
5.6
10 k
10 k
1 k
[1]
[2]
[2]
[1]
[2]
[2]
[1]
[2]
[3]
[3]
[3]
[3]
[3]
[2]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
[4]
Remarks
EZ90-25-TP
TDK C570X7R1H106KT000N or
capacitor of same quality.
Tekelec
(W
(W
(W
(W
(W
(W
(W
(W
(W
(W
long wires
UHF power LDMOS transistor
L) 24 mm
L) 15 mm
L) 5 mm
L) 2.4 mm
L) 2 mm
L) 2 mm
L) 5.5 mm
L) 15 mm
L) 3 mm
L) 2.4 mm
21 mm
43.5 mm
4.5 mm
39 mm
© NXP B.V. 2009. All rights reserved.
13 mm
24.5 mm
5 mm
6 mm
24 mm
5.7 mm
BLF878
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