BLF878,112 NXP Semiconductors, BLF878,112 Datasheet - Page 13

• Manufacturer Part Number: BLF878,112
• Description: TRANSISTOR RF LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF878,112

• Package / Case: SOT979A
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 18dB
• Voltage - Rated: 89V
• Current Rating: 1.4µA
• Current - Test: 1.4A
• Voltage - Test: 40V
• Power - Output: 300W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Drain-source Breakdown Voltage: 89 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 89V
• Output Power (max): 300W(Typ)
• Power Gain (typ)@vds: 21@42VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 15.5S
• Drain Source Resistance (max): 110(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 190@40VpF
• Output Capacitance (typ)@vds: 60@40VpF
• Reverse Capacitance (typ): 2@40VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/DVB-T/PAL BG
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-4738; 934061788112; BLF878; BLF878,112; BLF878

NXP Semiconductors
BLF878_2
Product data sheet
Fig 14. Class-AB common-source broadband amplifier; V
Fig 15. Printed-Circuit Board (PCB) for class-AB common source amplifier
50
C30
C28
C29
C31
R5
R6
+ V
+ V
C25
G1(test)
G2(test)
See
test voltages
R1
R2
R4
R6
R7
R3
L22
Table 9
C26
C27
L22
for a list of components.
L23
B2
L23
95 mm
C24
L21
L21
C22
C21 C20
Rev. 02 — 15 June 2009
L20
L20
C1 C2
L6
L6
D1(test)
L7
L1
L1
L7
C13
C14
, V
C3 C4
D2(test)
L2
L2
C15
C16
, V
G1(test)
95 mm
C17
C18
C5 C6 C9
C8
C7
L3
+ V
+ V
UHF power LDMOS transistor
and V
L3
D1(test)
D2(test)
G2(test)
L5
are drain and gate
B1
L5
© NXP B.V. 2009. All rights reserved.
BLF878
C11
C12
L4
001aai089
C10
001aai088
80 mm
13 of 18
50