BLF878,112 NXP Semiconductors, BLF878,112 Datasheet - Page 16

TRANSISTOR RF LDMOS SOT979A

BLF878,112

Manufacturer Part Number
BLF878,112
Description
TRANSISTOR RF LDMOS SOT979A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF878,112

Package / Case
SOT979A
Transistor Type
LDMOS
Frequency
860MHz
Gain
18dB
Voltage - Rated
89V
Current Rating
1.4µA
Current - Test
1.4A
Voltage - Test
40V
Power - Output
300W
Configuration
Dual Common Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.11 Ohms
Drain-source Breakdown Voltage
89 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
89V
Output Power (max)
300W(Typ)
Power Gain (typ)@vds
21@42VdB
Frequency (min)
470MHz
Frequency (max)
860MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
15.5S
Drain Source Resistance (max)
110(Typ)@6.15Vmohm
Input Capacitance (typ)@vds
190@40VpF
Output Capacitance (typ)@vds
60@40VpF
Reverse Capacitance (typ)
2@40VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
60%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/CW Class-AB/DVB-T/PAL BG
Number Of Elements
2
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-4738
934061788112
BLF878
BLF878,112
BLF878
NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLF878_2
Product data sheet
Document ID
BLF878_2
Modifications:
BLF878_1
Revision history
Release date
20090615
20081215
Table 10.
Acronym
CW
CCDF
DVB
DVB-T
ESD
IMD3
LDMOS
LDMOST
OFDM
PAL
PAR
PEP
RF
TTF
UHF
VSWR
Table 4 on page
Table 6 on page
Table 7 on page
Abbreviations
3: changed maximum value of V
3: changed several values.
4: removed PAR specification.
Data sheet status
Product data sheet
Preliminary data sheet
Rev. 02 — 15 June 2009
Description
Continuous Wave
Complementary Cumulative Distribution Function
Digital Video Broadcast
Digital Video Broadcast - Terrestrial
ElectroStatic Discharge
Third order InterModulation Distortion
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Orthogonal Frequency Division Multiplexing
Phase Alternating Line
Peak-to-Average power Ratio
Peak Envelope Power
Radio Frequency
Time To Failure
Ultra High Frequency
Voltage Standing-Wave Ratio
GS
.
Change notice
-
-
UHF power LDMOS transistor
© NXP B.V. 2009. All rights reserved.
Supersedes
BLF878_1
-
BLF878
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