BLF878,112 NXP Semiconductors, BLF878,112 Datasheet - Page 16

• Manufacturer Part Number: BLF878,112
• Description: TRANSISTOR RF LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF878,112

• Package / Case: SOT979A
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 18dB
• Voltage - Rated: 89V
• Current Rating: 1.4µA
• Current - Test: 1.4A
• Voltage - Test: 40V
• Power - Output: 300W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Drain-source Breakdown Voltage: 89 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 89V
• Output Power (max): 300W(Typ)
• Power Gain (typ)@vds: 21@42VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 15.5S
• Drain Source Resistance (max): 110(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 190@40VpF
• Output Capacitance (typ)@vds: 60@40VpF
• Reverse Capacitance (typ): 2@40VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/DVB-T/PAL BG
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-4738; 934061788112; BLF878; BLF878,112; BLF878

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 11.
BLF878_2
Product data sheet
Document ID
BLF878_2
Modifications:
BLF878_1
Revision history
Release date
20090615
20081215
•
•
•
Table 10.
Acronym
CW
CCDF
DVB
DVB-T
ESD
IMD3
LDMOS
LDMOST
OFDM
PAL
PAR
PEP
RF
TTF
UHF
VSWR
Table 4 on page
Table 6 on page
Table 7 on page
Abbreviations
3: changed maximum value of V
3: changed several values.
4: removed PAR specification.
Data sheet status
Product data sheet
Preliminary data sheet
Rev. 02 — 15 June 2009
Description
Continuous Wave
Complementary Cumulative Distribution Function
Digital Video Broadcast
Digital Video Broadcast - Terrestrial
ElectroStatic Discharge
Third order InterModulation Distortion
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Orthogonal Frequency Division Multiplexing
Phase Alternating Line
Peak-to-Average power Ratio
Peak Envelope Power
Radio Frequency
Time To Failure
Ultra High Frequency
Voltage Standing-Wave Ratio
GS
.
Change notice
-
-
UHF power LDMOS transistor
© NXP B.V. 2009. All rights reserved.
Supersedes
BLF878_1
-
BLF878
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