BLF878,112 NXP Semiconductors, BLF878,112 Datasheet - Page 7
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BLF878,112
Manufacturer Part Number
BLF878,112
Description
TRANSISTOR RF LDMOS SOT979A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF878112.pdf
(18 pages)
Specifications of BLF878,112
Package / Case
SOT979A
Transistor Type
LDMOS
Frequency
860MHz
Gain
18dB
Voltage - Rated
89V
Current Rating
1.4µA
Current - Test
1.4A
Voltage - Test
40V
Power - Output
300W
Configuration
Dual Common Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.11 Ohms
Drain-source Breakdown Voltage
89 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
89V
Output Power (max)
300W(Typ)
Power Gain (typ)@vds
21@42VdB
Frequency (min)
470MHz
Frequency (max)
860MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
15.5S
Drain Source Resistance (max)
110(Typ)@6.15Vmohm
Input Capacitance (typ)@vds
190@40VpF
Output Capacitance (typ)@vds
60@40VpF
Reverse Capacitance (typ)
2@40VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
60%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/CW Class-AB/DVB-T/PAL BG
Number Of Elements
2
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-4738
934061788112
BLF878
BLF878,112
BLF878
934061788112
BLF878
BLF878,112
BLF878
NXP Semiconductors
BLF878_2
Product data sheet
Fig 5.
(dB)
G
(1) V
(2) V
p
23
21
19
17
0
I
860 MHz test circuit.
DVB-T power gain and drain efficiency as
functions of average load power; typical
values
Dq
DS
DS
= 1.4 A; measured in a common source narrowband
= 40 V
= 42 V
G
7.1.3 DVB-T
D
p
50
100
(2)
(1)
(1)
(2)
150
200
P
001aai079
L(AV)
(W)
250
Rev. 02 — 15 June 2009
60
40
20
0
(%)
D
Fig 6.
IMD3
(dBc)
(1) V
(2) V
15
25
35
45
0
I
860 MHz test circuit.
DVB-T third order intermodulation distortion
as a function of average load power; typical
values
Dq
DS
DS
= 1.4 A; measured in a common source narrowband
= 40 V
= 42 V
(1)
(2)
50
100
UHF power LDMOS transistor
150
© NXP B.V. 2009. All rights reserved.
200
P
BLF878
001aai080
L(AV)
(W)
250
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