BLF878,112 NXP Semiconductors, BLF878,112 Datasheet - Page 4

• Manufacturer Part Number: BLF878,112
• Description: TRANSISTOR RF LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF878,112

• Package / Case: SOT979A
• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 18dB
• Voltage - Rated: 89V
• Current Rating: 1.4µA
• Current - Test: 1.4A
• Voltage - Test: 40V
• Power - Output: 300W
• Configuration: Dual Common Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Drain-source Breakdown Voltage: 89 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 89V
• Output Power (max): 300W(Typ)
• Power Gain (typ)@vds: 21@42VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 15.5S
• Drain Source Resistance (max): 110(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 190@40VpF
• Output Capacitance (typ)@vds: 60@40VpF
• Reverse Capacitance (typ): 2@40VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 60%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/CW Class-AB/DVB-T/PAL BG
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-4738; 934061788112; BLF878; BLF878,112; BLF878

NXP Semiconductors
7. Application information
BLF878_2
Product data sheet
Table 7.
T
[1]
[2]
Mode of operation
2-Tone, class AB
DVB-T (8k OFDM)
case
Fig 1.
I
Measured [dBc] with delta marker at 4.3 MHz from center frequency.
Dq
= 25 C unless otherwise specified.
= 1.4 A for total device.
V
Output capacitance as a function of drain-source voltage; typical values per
section; capacitance value without internal matching
GS
RF performance in a common-source narrowband 860 MHz test circuit
= 0 V; f = 1 MHz.
f
(MHz)
f
858
C
(pF)
1
oss
350
250
150
= 860; f
Rev. 02 — 15 June 2009
50
0
2
= 860.1
20
V
(V)
40
40
DS
I
(A)
1.4
1.4
Dq
[1]
[1]
40
P
(W)
300
-
V
L(PEP)
DS
001aai075
(V)
UHF power LDMOS transistor
P
(W)
-
75
60
L(AV)
G
(dB) (%)
> 18 > 42 < 31
> 18 > 29 < 29
p
© NXP B.V. 2009. All rights reserved.
BLF878
D
IMD3
(dBc)
4 of 18
[2]