BLF878,112 NXP Semiconductors, BLF878,112 Datasheet - Page 14

TRANSISTOR RF LDMOS SOT979A

BLF878,112

Manufacturer Part Number
BLF878,112
Description
TRANSISTOR RF LDMOS SOT979A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF878,112

Package / Case
SOT979A
Transistor Type
LDMOS
Frequency
860MHz
Gain
18dB
Voltage - Rated
89V
Current Rating
1.4µA
Current - Test
1.4A
Voltage - Test
40V
Power - Output
300W
Configuration
Dual Common Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.11 Ohms
Drain-source Breakdown Voltage
89 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
89V
Output Power (max)
300W(Typ)
Power Gain (typ)@vds
21@42VdB
Frequency (min)
470MHz
Frequency (max)
860MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
15.5S
Drain Source Resistance (max)
110(Typ)@6.15Vmohm
Input Capacitance (typ)@vds
190@40VpF
Output Capacitance (typ)@vds
60@40VpF
Reverse Capacitance (typ)
2@40VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
60%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/CW Class-AB/DVB-T/PAL BG
Number Of Elements
2
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-4738
934061788112
BLF878
BLF878,112
BLF878
NXP Semiconductors
BLF878_2
Product data sheet
Fig 16. Component layout for class-AB common source amplifier
R5
R6
See
R4
R3
Table 9
R1
R2
C25
R8
R7
+V
+V
C31
for a list of components.
C30
G1(test)
G2(test)
C28
C29
C27
C26
B2
C24
C23
C22
Rev. 02 — 15 June 2009
mm
18
C21
C20
mm
4
mm
12
C1
mm
3.6
C2
mm
22
C13
C3
C14
C4
C15
C16
C18
C17
C5
C7
mm
UHF power LDMOS transistor
C8
12
C6
mm
C9
7
+V
+V
D1(test)
D2(test)
B1
C11
C12
© NXP B.V. 2009. All rights reserved.
BLF878
C10
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