2N5555 Fairchild Semiconductor, 2N5555 Datasheet

2N5555

Manufacturer Part Number

2N5555

Description

AMP N-CHAN JFET 25V TO-92

Manufacturer

Fairchild Semiconductor

Datasheets

1.2N5555.pdf (3 pages)

2.2N5555.pdf (214 pages)

Specifications of 2N5555

Transistor Type

N-Channel JFET

Voltage - Rated

25V

Current Rating

15mA

Package / Case

TO-92

Configuration

Single

Transistor Polarity

N-Channel

Power Dissipation

350 mW

Gate-source Breakdown Voltage

- 25 V

Drain Current (idss At Vgs=0)

1 mA to 8 mA

Resistance Drain-source Rds (on)

150 Ohms

Maximum Operating Temperature

+ 150 C

Maximum Drain Gate Voltage

25 V

Minimum Operating Temperature

- 55 C

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Power - Output

Frequency

Gain

Noise Figure

Current - Test

Voltage - Test

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

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Current page: 1 of 3
Download datasheet (142Kb)

2N5555 Rev. 1.0.0

2N5555

N-Channel RF Amplifier

• This device is designed primarily for electronic switching applications such as low on resistance analog switching.

• Sourced from process 50.

Absolute Maximum Ratings*

* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These rating are based on a maximum junction temperature of 150 degrees C.

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

qJC

qJA

, T

Symbol

STG

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

Operating and Storage Junction Temperature Range

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

=25°C unless otherwise noted

Parameter

=25°C unless otherwise noted

1. Gate 2. Source 3. Drain

TO-92

-55 ~ 150

Value

Max.

350

125

357

-25

2.8

www.fairchildsemi.com

May 2008

Units

mW/°C

°C/W

°C

Related parts for 2N5555

2N5555 Summary of contents

Page 1

... Symbol Total Device Dissipation P D Derate above 25°C R Thermal Resistance, Junction to Case qJC R Thermal Resistance, Junction to Ambient qJA © 2007 Fairchild Semiconductor Corporation 2N5555 Rev. 1.0.0 TO- Gate 2. Source 3. Drain T =25°C unless otherwise noted a Parameter T =25°C unless otherwise noted a Parameter ...

Page 2

... Zero-Gate Voltage Drain Current * DSS R (on) Drain-Source On Resistance DS Small Signal Characteristics C Input Capacitance iss C Reverse Transfer Capacitance rss * Pulse Test: Pulse Width £ 300ms, Duty Cycle = 2% © 2007 Fairchild Semiconductor Corporation 2N5555 Rev. 1.0.0 T =25°C unless otherwise noted a Test Condition I = 10mA 15V 25° ...

Page 3

... Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation 2N5555 Rev. 1.0.0 Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...

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