MMBFJ310 Fairchild Semiconductor, MMBFJ310 Datasheet - Page 2

• Manufacturer Part Number: MMBFJ310
• Description: IC SWITCH RF N-CH 25V 10MA SOT23
• Manufacturer: Fairchild Semiconductor

Specifications of MMBFJ310

• Transistor Type: N-Channel JFET
• Frequency: 450MHz
• Gain: 12dB
• Voltage - Rated: 25V
• Current Rating: 60mA
• Noise Figure: 3dB
• Current - Test: 10mA
• Voltage - Test: 10V
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: N-Channel
• Forward Transconductance Gfs (max / Min): 0.008 S to 0.018 S
• Drain Source Voltage Vds: 25 V
• Gate-source Cutoff Voltage: - 6.5 V
• Gate-source Breakdown Voltage: - 25 V
• Drain Current (idss At Vgs=0): 2 mA to 15 mA
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Configuration: Single
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Breakdown Voltage Vbr: -25V
• Zero Gate Voltage Drain Current Idss: 24mA To 60mA
• Gate-source Cutoff Voltage Vgs(off) Max: -6.5V
• Power Dissipation Pd: 350mW
• Rohs Compliant: Yes
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBFJ310; MMBFJ310TR

J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1
© 2010 Fairchild Semiconductor Corporation
Electrical Characteristics
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Off Characteristics
BV
On Characteristics
Small Signal Characteristics
Symbol
V
Re
Re
Re
Re
V
I
(BR)GSS
GS(off)
I
g
G
C
C
g
GSS
DSS
NF
GS(f)
g
g
e
oss
(yos)
(yfs
(yig)
og
(yis)
dg
pg
fs
fg
sg
n
)
Gate-Source Breakdown Voltage I
Gate Reverse Current
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain
Current*
Gate-Source Forward Voltage
Common-Source Input
Conductance
Common-Source Output
Conductance
Common-Gate Power Gain
Common-Source Forward
Transconductance
Common-Gate Input
Conductance
Common-Source Forward
Transconductance
Common-Source Output
Conductance
Common-Gate Forward
Conductance
Common-Gate Output
Conductance
Drain-Gate Capacitance
Source-Gate Capacitance
Noise Figure
Equivalent Short-Circuit Input
Noise Voltage
Parameter
T
a
= 25°C unless otherwise noted
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
G
GS
GS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
DS
= -1.0μA, V
= 10V, I
= 10V, V
= 0, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 0, V
= 0, V
= 10V, I
= 10V, I
= -15V, V
= -15V, V
Test Condition
G
GS
GS
2
= 1.0mA
D
D
D
D
D
D
D
D
D
D
D
D
GS
DS
= -10V, f = 1.0MHz
= -10V, f = 1.0MHz
DS
DS
= 1.0nA
= 10mA, f = 100MHz
= 10mA, f = 100MHz
= 10mA, f = 100MHz
= 10mA, f = 100MHz
= 10mA, f = 100MHz
= 10mA, f = 1.0kHz
= 10mA, f = 1.0kHz
= 10mA, f = 1.0kHz
= 10mA, f = 1.0kHz
= 10mA, f = 450MHz
= 10mA, f = 100Hz
= 0
= 0
= 0
= 0, T
a
= 125°C
309
310
309
310
309
310
309
310
309
310
309
310
10,000
8,000
Min.
-1.0
-2.0
-25
12
24
13,000
12,000
Typ.
0.25
100
150
0.7
0.5
2.0
4.1
3.0
6.0
16
12
12
20,000
18,000
Max.
-1.0
-1.0
-4.0
-6.5
150
1.0
2.5
5.0
30
60
www.fairchildsemi.com
mmhos
mmhos
mmhos
mmhos
mmhos
μmhos
μmhos
μmhos
μmhos
μmhos
μmhos
μmhos
nV/ Hz
Units
mA
mA
nA
μA
dB
dB
pF
pF
V
V
V
V