BF 2030W E6814 Infineon Technologies, BF 2030W E6814 Datasheet - Page 5

• Manufacturer Part Number: BF 2030W E6814
• Description: MOSFET N-CH 8V 40MA SOT-343
• Manufacturer: Infineon Technologies

Specifications of BF 2030W E6814

• Package / Case: SC-70-4, SC-82-4, SOT-323-4, SOT-343
• Transistor Type: N-Channel
• Frequency: 800MHz
• Gain: 23dB
• Voltage - Rated: 8V
• Current Rating: 40mA
• Noise Figure: 1.5dB
• Current - Test: 10mA
• Voltage - Test: 5V
• Configuration: Single Dual Gate
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 8 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 0.04 A
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Channel Type: N
• Channel Mode: Depletion
• Drain Source Voltage (max): 8V
• Power Gain (typ)@vds: 23@5VdB
• Noise Figure (max): 2.2dB
• Frequency (max): 1GHz
• Package Type: SOT-343
• Pin Count: 3 +Tab
• Forward Transconductance (typ): 0.031S
• Input Capacitance (typ)@vds: 2.4@5V@Gate 1pF
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Number Of Elements: 1
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Lead Free Status / Rohs Status: Compliant
• Other names: BF2030WE6814XT; SP000012223

Gate 1 current I
V
V
Drain current I
V
V
DS
G2S
DS
G2S
mA
µA
210
180
165
150
135
120
105
= 5V
= 5V
90
75
60
45
30
15
30
24
22
20
18
16
14
12
10
= Parameter
= Parameter
0
8
6
4
2
0
0
0
0.2 0.4 0.6 0.8
0.4
0.8
D
G1
=
= (V
1.2
(V
G1S
1
1.6
G1S
1.2 1.4 1.6
)
)
2
4V
4V
3.5V
2.4 V
3V
3V
2.5V
V
V
2V
V
DS
G1S
2V
1.5V
3
2
5
Gate 1 forward transconductance
g
V
Drain current I
V
(connected to V GG , V GG =gate1 supply voltage)
fs
DS
DS
=
mS
mA
= 5V, V
= 5V, V
40
30
25
20
15
10
13
11
10
5
0
9
8
7
6
5
4
3
2
1
0
0
0
(I
D
0.5
)
4
G2S
G2S
1
D
8
2V
= Parameter
= 4V, R
1.5
=
12
2
(V
2.5V
GG
2.5
G1
16
)
= 100k
3
20
3.5
3V
BF2030...
2007-04-20
24 mA
4
I
V
4V
D
V
GG
30
5