BF 2030W E6814 Infineon Technologies, BF 2030W E6814 Datasheet - Page 9

MOSFET N-CH 8V 40MA SOT-343

BF 2030W E6814

Manufacturer Part Number
BF 2030W E6814
Description
MOSFET N-CH 8V 40MA SOT-343
Manufacturer
Infineon Technologies
Datasheet

Specifications of BF 2030W E6814

Package / Case
SC-70-4, SC-82-4, SOT-323-4, SOT-343
Transistor Type
N-Channel
Frequency
800MHz
Gain
23dB
Voltage - Rated
8V
Current Rating
40mA
Noise Figure
1.5dB
Current - Test
10mA
Voltage - Test
5V
Configuration
Single Dual Gate
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
6 V
Continuous Drain Current
0.04 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Channel Type
N
Channel Mode
Depletion
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
23@5VdB
Noise Figure (max)
2.2dB
Frequency (max)
1GHz
Package Type
SOT-343
Pin Count
3 +Tab
Forward Transconductance (typ)
0.031S
Input Capacitance (typ)@vds
2.4@5V@Gate 1pF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Compliant
Other names
BF2030WE6814XT
SP000012223
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
Pin 1
0.4
0.25
+0.1
-0.05
Package SOT143R
Pin 1
M
B
2.9
4
1
1.7
1.9
±0.1
0.8
0.8 0.8
4
3
3.15
2
0.8
0.2
1.2
+0.1
-0.05
B
9
1.2
0.8
Reverse bar
2005, June
Date code (YM)
Manufacturer
BFP181R
Type code
0.2
M
0.2
A
1.15
1
0.1 MAX.
±0.1
A
BF2030...
2007-04-20

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