BF 5020R E6327 Infineon Technologies, BF 5020R E6327 Datasheet - Page 6

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BF 5020R E6327

Manufacturer Part Number
BF 5020R E6327
Description
MOSFET N-CH 8V 25MA SOT143-4
Manufacturer
Infineon Technologies
Datasheet

Specifications of BF 5020R E6327

Package / Case
SOT-143R
Transistor Type
N-Channel
Frequency
800MHz
Gain
26dB
Voltage - Rated
8V
Current Rating
25mA
Noise Figure
1.2dB
Current - Test
10mA
Voltage - Test
5V
Configuration
Single Dual Gate
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
+/- 6 V
Continuous Drain Current
0.025 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Application
VHF/UHF
Channel Type
N
Channel Mode
Depletion
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
32@5VdB
Noise Figure (max)
1.2(Typ)dB
Package Type
SOT-143R
Pin Count
3 +Tab
Forward Transconductance (typ)
0.034S
Input Capacitance (typ)@vds
2.4@5V@Gate 1pF
Output Capacitance (typ)@vds
1@5VpF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
1
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Compliant
Other names
SP000474406
Drain current I
V
AGC characteristic AGC = ƒ(V
f = 800 MHz
measured in test circuit, see page 7
DS
mA
dB
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
= 5 V, R
28
24
22
20
18
16
14
12
10
8
6
4
2
0
0
0.5
0
Rg1=120KOHm
0.5
1
G1
D
1
1.5
= Parameter in kΩ
= ƒ(V
1.5
2
G2S
2
Rg1=82KOHm
120K
2.5
)
82K
2.5
3
G2S
3
V
)
V
V
V
G2S
G2S
4
4
6
AGC characteristic AGC = ƒ(V
f = 50 MHz
measured in test circuit, see page 7
Crossmodulation V
V
measured in test circuit, see page 7
DS
dBµV
dB
107
104
103
102
101
100
-20
-30
-40
-50
-60
-70
-80
= 5 V
99
98
97
96
95
94
93
92
0
0.5
0
Rg=120KOHm
5
1
10
RG1=82KOHm_22m
1.5
15
20
unw
2
Rg=82KOHm
25
RG1=120KOHm_15m
= (AGC)
2.5
30
35
3
BF5020...
2009-10-01
G2S
40 dB
V
)
V
AGC
G2S
50
4

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