PTFA091201E V4 Infineon Technologies

PTFA091201E V4

Manufacturer Part Number

PTFA091201E V4

Description

IC FET RF LDMOS 120W H-36248-2

Manufacturer

Infineon Technologies

Specifications of PTFA091201E V4

Transistor Type

LDMOS

Frequency

960MHz

Gain

19dB

Voltage - Rated

65V

Current Rating

10µA

Current - Test

750mA

Voltage - Test

28V

Power - Output

110W

Package / Case

2-Flatpack, Fin Leads

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.07 Ohms

Drain-source Breakdown Voltage

65 V

Gate-source Breakdown Voltage

- 0.5 V to + 12 V

Power Dissipation

427 W

Maximum Operating Temperature

+ 200 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 40 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Noise Figure

Lead Free Status / Rohs Status

Details

Other names

SP000317908

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