BG 5130R E6327 Infineon Technologies, BG 5130R E6327 Datasheet

no-image

BG 5130R E6327

Manufacturer Part Number
BG 5130R E6327
Description
MOSFET N-CH DUAL 8V SOT-363R
Manufacturer
Infineon Technologies
Datasheets

Specifications of BG 5130R E6327

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 N-Channel (Dual)
Frequency
800MHz
Gain
24dB
Voltage - Rated
8V
Current Rating
25mA
Noise Figure
1.3dB
Current - Test
10mA
Voltage - Test
3V
Configuration
Dual
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
8 V
Gate-source Breakdown Voltage
6 V
Continuous Drain Current
0.025 A
Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Application
VHF/UHF
Channel Type
N
Channel Mode
Depletion
Drain Source Voltage (max)
8V
Power Gain (typ)@vds
35@3VdB
Noise Figure (max)
1.3(Typ)dB
Package Type
SOT-363
Pin Count
6
Forward Transconductance (typ)
0.041S
Input Capacitance (typ)@vds
2.7@3V@Gate 1pF
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Number Of Elements
2
Power Dissipation (max)
200mW
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Lead Free Status / Rohs Status
Compliant
Other names
BG5130RE6327XT
SP000101237
DUAL - N-Channel MOSFET Tetrode
BG5130R
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BG5130R
* For amp. A; ** for amp. B
Low noise gain controlled input
Integrated gate protection diodes
Low noise figure
High gain, high forward transadmittance
Improved cross modulation at gain reduction
Biasing network partially integrated
Pb-free (RoHS compliant) package
Qualified according AEC Q101
stages of UHF-and VHF - tuners
with 3V up to 5V supply voltage
Package
SOT363
1=G1* 2=S
1
Pin Configuration
3=D*
AGC
Input
RF
4=D**
RG1
VGG
G2
G1
5=G2
6
5
GND
4
6=G1** KYs
Drain
BG5130R
2007-06-01
RF Output
1
Marking
+ DC
2
3

Related parts for BG 5130R E6327

BG 5130R E6327 Summary of contents

Page 1

DUAL - N-Channel MOSFET Tetrode Low noise gain controlled input stages of UHF-and VHF - tuners with supply voltage Integrated gate protection diodes Low noise figure High gain, high forward transadmittance Improved cross modulation at gain ...

Page 2

Maximum Ratings Parameter Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation T 78 °C S Storage temperature Channel temperature Thermal Resistance Parameter 1) Channel - soldering point 1 For calculation ...

Page 3

Electrical Characteristics at T Parameter DC Characteristics Drain-source breakdown voltage µ G1S G2S Gate1-source breakdown voltage + mA G1S G2S Gate2-source breakdown voltage +I ...

Page 4

Electrical Characteristics at T Parameter AC Characteristics - (verified by random sampling) Forward transconductance G2S Gate1 input capacitance MHz DS ...

Page 5

Total power dissipation P 300 mW 200 150 100 Output characteristics Drain ...

Page 6

Gate 1 forward transconductance 3V Parameter DS G2S 1. Drain current I = ...

Page 7

Power gain G2S MHz -10 - Noise figure G2S f = 800 MHz ...

Page 8

Crossmodulation V = (AGC) unw 115 dBµV 105 100 AGC 8 BG5130R 2007-06-01 ...

Page 9

Crossmodulation test circuit R GEN AGC DS 4n7 R1 10k 2.2 uH 4n7 4n7 50 RG1 BG5130R 4n7 RL 50 Semibiased 2007-06-01 ...

Page 10

Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...

Page 11

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

Related keywords