PTF080101M V1 Infineon Technologies

PTF080101M V1

Manufacturer Part Number

PTF080101M V1

Description

IC FET RF LDMOS 10W TSSOP-10

Manufacturer

Infineon Technologies

Series

GOLDMOS®r

Specifications of PTF080101M V1

Transistor Type

LDMOS

Frequency

960MHz

Gain

16dB

Voltage - Rated

65V

Current Rating

1µA

Current - Test

180mA

Voltage - Test

28V

Power - Output

10W

Package / Case

10-TSSOP

Channel Type

Channel Mode

Enhancement

Drain Source Voltage (max)

65V

Output Power (max)

12.5W

Power Gain (typ)@vds

16(Min)dB

Frequency (min)

450MHz

Frequency (max)

960MHz

Package Type

RFP

Pin Count

Drain Source Resistance (max)

830(Typ)@10Vmohm

Operating Temp Range

-40C to 150C

Drain Efficiency (typ)

35(Min)%

Mounting

Surface Mount

Mode Of Operation

2-Tone

Number Of Elements

Power Dissipation (max)

18800mW

Vswr (max)

Screening Level

Automotive

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Noise Figure

Lead Free Status / Rohs Status

Compliant

Other names

PTF080101MV1XT
SP000082763

Related parts for PTF080101M V1

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