PTFA261301E V1 Infineon Technologies

PTFA261301E V1

Manufacturer Part Number

PTFA261301E V1

Description

IC FET RF LDMOS 130W H-30260-2

Manufacturer

Infineon Technologies

Series

GOLDMOS®r

Specifications of PTFA261301E V1

Transistor Type

LDMOS

Frequency

2.68GHz

Gain

13.5dB

Voltage - Rated

65V

Current Rating

10µA

Current - Test

1.4A

Voltage - Test

28V

Power - Output

130W

Package / Case

H30260-2

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.07 Ohms

Drain-source Breakdown Voltage

65 V

Gate-source Breakdown Voltage

- 0.5 V to + 12 V

Power Dissipation

449 W

Maximum Operating Temperature

+ 200 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 40 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Noise Figure

Lead Free Status / Rohs Status

Details

Other names

FA261301EV1XP
PTFA261301EV1X
SP000086852

Related parts for PTFA261301E V1

Related keywords

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PTFA261301E V1 part
PTFA261301E V1 distributor
PTFA261301E V1 RoHS