MMBT5770 Fairchild Semiconductor, MMBT5770 Datasheet
MMBT5770
Manufacturer Part Number
MMBT5770
Description
TRANSISTOR RF NPN SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBT5770.pdf
(6 pages)
Specifications of MMBT5770
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (max)
15V
Frequency - Transition
600MHz
Power - Max
225mW
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 3mA, 1V
Current - Collector (ic) (max)
10mA
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gain
-
Noise Figure (db Typ @ F)
-
MMBT5770 Rev. 1.0.0
© 2007 Fairchild Semiconductor Corporation
MMBT5770
NPN RF Transistor
• This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.
• Sourced from process 43.
Absolute Maximum Ratings
Thermal Characteristics
* Device mounted on FR-4PCB 1.6” × 1.6” × 0.06”.
Electrical Characteristics
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
V
V
V
I
T
P
R
Off Characteristics
V
V
V
I
On Characteristics *
h
V
V
Small Signal Characteristics
f
C
Symbol
CBO
T
J
FE
CBO
CEO
EBO
D
(BR)CBO
CEO(sus)
(BR)EBO
CE (sat)
BE (sat)
θJA
, T
Symbol
Symbol
STG
Collector-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage*
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Total Device Dissipation
Thermal Resistance, Junction to Ambient
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Operating and Storage Junction Temperature Range
Derate above 25°C
Parameter
T
a
Parameter
T
=25°C unless otherwise noted
- Continuous
a
=25°C unless otherwise noted
Parameter
T
a
= 25°C unless otherwise noted
1. Base 2. Emitter 3. Collector
3
I
I
I
V
V
I
I
I
C
C
E
C
C
C
CB
CE
= 10 μA, I
= 1.0 μA, I
= 3.0 mA, I
= 10mA, I
= 10mA, I
= 4.0mA, V
= 15 V, I
1
= 1.0V, I
1
SOT-23
Test Condition
C
E
B
B
E
C
B
= 0
= 0
= 0
CE
= 1.0mA
= 1.0mA
= 0
2
= 3.0mA
= 10V, f = 100MHz
Max.
225
556
1.8
-55 to +150
Value
4.5
30
15
10
Min.
600
30
15
30
3
Max.
0.4
1.0
50
mW/°C
Units
°C/W
February 2008
mW
www.fairchildsemi.com
Units
mA
°C
V
V
V
Units
MHz
nA
V
V
V
V
V
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MMBT5770 Summary of contents
Page 1
... Collector-Emitter Saturation Voltage CE (sat) V Base-Emitter Saturation Voltage BE (sat) Small Signal Characteristics f Current Gain Bandwidth Product T * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% © 2007 Fairchild Semiconductor Corporation MMBT5770 Rev. 1.0 SOT- Base 2. Emitter 3. Collector T = 25°C unless otherwise noted a Parameter - Continuous T =25° ...
Page 2
... Typical Characteristics © 2007 Fairchild Semiconductor Corporation MMBT5770 Rev. 1.0.0 2 www.fairchildsemi.com ...
Page 3
... Typical Characteristics © 2007 Fairchild Semiconductor Corporation MMBT5770 Rev. 1.0.0 (continued) 3 www.fairchildsemi.com ...
Page 4
... Typical Characteristics © 2007 Fairchild Semiconductor Corporation MMBT5770 Rev. 1.0.0 (continued) 4 www.fairchildsemi.com ...
Page 5
... Typical Characteristics © 2007 Fairchild Semiconductor Corporation MMBT5770 Rev. 1.0.0 (continued) 5 www.fairchildsemi.com ...
Page 6
... Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production © 2007 Fairchild Semiconductor Corporation MMBT5770 Rev. 1.0.0 ® Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ ...