MPSH10 Fairchild Semiconductor, MPSH10 Datasheet - Page 4

• Manufacturer Part Number: MPSH10
• Description: TRANSISTOR NPN RF VHF/UHF TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of MPSH10

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (max): 25V
• Frequency - Transition: 650MHz
• Power - Max: 350mW
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 4mA, 10V
• Current - Collector (ic) (max): 50mA
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: NPN
• Maximum Operating Frequency: 650 MHz (Min)
• Collector- Emitter Voltage Vceo Max: 25 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: 0.05 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 60 @ 4mA @ 10V
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gain: -
• Noise Figure (db Typ @ F): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MPSH10FS

Common Base Y Parameters vs. Frequency
-120
-120
120
120
-40
-80
-40
-80
80
40
80
40
0
0
100
100
Forward Transfer Admittance
V
I
CE
C
= 5 mA
= 10V
Input Admittance
f - FREQUENCY (MHz)
200
f - FREQUENCY (MHz)
200
b
ib
b
g
fb
fb
g
ib
500
500
V
I
CE
C
= 5 mA
= 10V
1000
1000
8
6
4
2
0
12
10
100
8
6
4
2
0
100
V
Reverse Transfer Admittance
I
V
I
CE
C
C
CE
= 5 mA
= 5 mA
= 10V
= 10V
Output Admittance
200
f - FREQUENCY (MHz)
200
f - FREQUENCY (MHz)
NPN RF Transistor
b
ob
-b
500
500
rb
-g
g
ob
rb
(continued)
1000
1000
3